参数资料
型号: ULQ2003ATDG4Q1
厂商: Texas Instruments
文件页数: 2/17页
文件大小: 0K
描述: IC DARLINGTON TRANS ARRAY 16SOIC
标准包装: 40
类型: 达林顿晶体管矩阵
驱动器/接收器数: 7/0
电源电压: 6 V ~ 15 V
安装类型: 表面贴装
封装/外壳: 16-SOIC(0.154",3.90mm 宽)
供应商设备封装: 16-SOIC N
包装: 管件
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
Addendum-Page 2
(4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
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In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF ULQ2003A-Q1, ULQ2004A-Q1 :
Catalog: ULQ2003A, ULQ2004A
NOTE: Qualified Version Definitions:
Catalog - TI's standard catalog product
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ULQ2003ATDQ1 功能描述:达林顿晶体管 Auto Cat HiVltg Hi Crnt Darl Trans RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
ULQ2003ATDRAS 制造商:Rochester Electronics LLC 功能描述: 制造商:Texas Instruments 功能描述:
ULQ2003ATDRG4Q1 功能描述:达林顿晶体管 Darl Trans Arrays RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
ULQ2003ATDRQ1 功能描述:达林顿晶体管 Hi-Vltg Hi-Crnt Darl Transistor Array RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel
ULQ2003ATDRRB 制造商:Texas Instruments 功能描述: