参数资料
型号: UM6J1NTN
厂商: Rohm Semiconductor
文件页数: 2/4页
文件大小: 0K
描述: MOSFET 2P-CH 30V 200MA UMT6
产品目录绘图: UM6K Series SOT-363
特色产品: ECOMOS? Series MOSFETs
标准包装: 1
FET 型: 2 个 P 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 200mA
开态Rds(最大)@ Id, Vgs @ 25° C: 1.4 欧姆 @ 200mA,10V
Id 时的 Vgs(th)(最大): 2.5V @ 1mA
输入电容 (Ciss) @ Vds: 30pF @ 10V
功率 - 最大: 150mW
安装类型: 表面贴装
封装/外壳: 6-TSSOP,SC-88,SOT-363
供应商设备封装: UMT6
包装: 标准包装
产品目录页面: 1639 (CN2011-ZH PDF)
其它名称: UM6J1NTNDKR
UM6J1N
Electrical characteristics (Ta=25 ° C)
<It is the same characteristics for Tr1 and Tr2.>
Data Sheet
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
±10
Unit
μ A
Conditions
V GS =±20V, V DS =0V
Drain-source breakdown voltage V (BR) DSS
? 30
?
?
V
I D = ? 1mA, V GS =0V
?
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
I DSS
V GS (th)
R DS (on)
Y fs ?
C iss
C oss
C rss
t d (on) ?
t r ?
t d (off) ?
t f ?
?
? 1.0
?
?
?
0.2
?
?
?
?
?
?
?
?
?
0.9
1.4
1.6
?
30
4
5
8
5
30
40
? 1
? 2.5
1.4
2.1
2.4
?
?
?
?
?
?
?
?
μ A
V
?
?
?
S
pF
pF
pF
ns
ns
ns
ns
V DS = ? 30V, V GS =0V
V DS = ? 10V, I D = ? 1mA
I D = ? 0.2A, V GS = ? 10V
I D = ? 0.15A, V GS = ? 4.5V
I D = ? 0.15A, V GS = ? 4V
V DS = ? 10V, I D = ? 0.15A
V DS = ? 10V
V GS =0V
f=1MHz
V DD ? 15V
I D = ? 0.15A
V GS = ? 10V
R L 100 ?
R G =10 ?
? Pulsed
Body diode characteristics (source-drain)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
V SD
?
?
?
? 1.2
V
I S = ? 0.1A, V GS =0V
? Pulsed
Electrical characteristic curves
V DD = ? 15V
I D = ? 200mA
100
Ta=25 ° C
f=1MHz
V GS =0V
1000
tf
Ta=25 ° C
V DD = ? 15V
V GS = ? 10V
R G =10 ?
Pulsed
8
Ta=25 ° C
7
R G =10 ?
6 Pulsed
Ciss
10
Crss
Coss
100
10
td(off)
td(on)
5
4
3
2
tr
1
1
0.01
0.1
1
10
100
1
0.01
0.1
1
0
0
0.2
0.4
0.6
0.8
1
DRAIN-SOURCE VOLTAGE : ? V DS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
DRAIN CURRENT : ? I D (A)
Fig.2 Switching Characteristics
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
1
0.1
Ta=125°C
75°C
25°C
?25°C
V DS = ? 10V
Pulsed
20
15
I D = ?125mA
I D = ?200mA
Ta=25 ° C
Pulsed
1
Ta=125°C
75°C
25°C
V GS =0V
Pulsed
0.01
10
5
0.1
?25°C
0.001
1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4
0
0
1
2
3
4
5
6
7
8
9
10
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
GATE-SOURCE VOLTAGE : ? V GS (V)
Fig.4 Typical Transfer Characteristics
GATE-SOURCE VOLTAGE : ? V GS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
SOURCE-DRAIN VOLTAGE : ? V SD (V)
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage
Gate-Source Voltage
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