参数资料
型号: UMP1NTR
厂商: Rohm Semiconductor
文件页数: 1/3页
文件大小: 345K
描述: DIODE SWITCH 80V 25MA SOT-353 TR
产品培训模块: Diodes Overview
标准包装: 3,000
电压 - 在 If 时为正向 (Vf)(最大): 900mV @ 5mA
电流 - 在 Vr 时反向漏电: 100nA @ 70V
电流 - 平均整流 (Io)(每个二极管): 25mA
电压 - (Vr)(最大): 80V
反向恢复时间(trr): 4ns
二极管类型: 标准
速度: 小信号 =< 200mA(Io),任意速度
二极管配置: 2 对共阳极
安装类型: 表面贴装
封装/外壳: 6-TSSOP(5 引线),SC-88A,SOT-353
供应商设备封装: UMD5
包装: 带卷 (TR)
Data Sheet
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
UMP1N
?Applications
?Dimensions (Unit : mm) ?Land size figure (Unit : mm)
Ultra high speed switching
?Features
1) Small mold type. (UMD5)
2) High reliability.
?Construction
Silicon epitaxial planar
?Structure
?Taping specifications (Unit : mm)
?Absolute maximum ratings (Ta=25°C)
Parameter LimitsSymbol Unit
VRM
V
Reverse voltage (DC) 80VR
V
Forward current (Single) 80IFM
mA
Io mA25
Surge current (t=1us) 250Isurge
mA
Pd mW150
Tj °C150
Tstg °C?55 to ?150
?Electrical characteristics
(Ta=25°C)
Symbol Min. Typ. Max. Unit
Conditions
VF
- - 0.9 V
IF=5mA
IR
- - 0.1
μA
VR=70V
Ct - - 3.5 pF
VR=6V , f=1MHz
trr - - 4 ns
VR=6V , IF=5mA , RL=50?
Reverse recovery time
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Storage temperature
Power dissipation
Junction temperature
Average rectified forward current (single)
Reverse voltage (repetitive peak)
80
UMD5
0.35
0.9
1.6
0.650.65
2.25±0.1
    0
4.0±0.1
4.0±0.1
2.0±0.05
φ1.55±0.1
      0
3.5±0.05
1.75±0.1
8.0±0.2
φ1.1±0.1
2.45±0.1
1.15±0.1
2.4±0.1
0.3±0.1
2.4±0.1
0~0.5
5.5±0.2
ROHM : UMD5
JEDEC : SOT-353
JEITA : SC-88A
dot (year week factory)
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