参数资料
型号: V30150C-M3/4W
厂商: Vishay General Semiconductor
文件页数: 1/5页
文件大小: 156K
描述: DIODE SCHOTTKY 150V 30A TO220AB
标准包装: 1,000
系列: TMBS®
电压 - 在 If 时为正向 (Vf)(最大): 1.36V @ 15A
电流 - 在 Vr 时反向漏电: 200µA @ 150V
电流 - 平均整流 (Io)(每个二极管): 15A
电压 - (Vr)(最大): 150V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: V30150C-M3/4WGI
V30150C, VF30150C, VB30150C & VI30150C
Vishay General Semiconductor
Document Number: 89047
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF
= 0.56 V at I
F
= 5 A
FEATURES
? Trench MOS Schottky technology
Low forward voltage drop, low power
losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C (for TO-263AB package)
Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
150 V
IFSM
140 A
VF at IF
= 15 A 0.71 V
TJ
max. 150 °C
TO-220AB
V30150C VF30150C1
32
PIN 1
PIN 2
CASE
PIN 3
PIN 1
PIN 2
PIN 3
TMBS?
ITO-220AB
VI30150C
TO-262AA
PIN 1
PIN 2
PIN 3
K
VB30150C
PIN 1
PIN 2
K
HEATSINK
1
2
K
TO-263AB
2
3
1
K
3
1
2
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V30150C VF30150C VB30150C VI30150C UNIT
Maximum repetitive peak reverse voltage VRRM
150 V
Maximum average forward rectified current
(fig. 1)
per device
per diode
IF(AV)
30
15
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
140 A
Non-repetitive avalanche energy
at TJ
= 25 °C, L = 60 mH per diode
EAS
110 mJ
Peak repetitive reverse current at tp
= 2 μs, 1 kHz,
TJ
= 38 °C ± 2 °C per diode
IRRM
0.5 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
VAC
1500 V
Operating junction and storage temperature range TJ, TSTG
- 55 to + 150 °C
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