参数资料
型号: V20100C-E3/4W
厂商: Vishay General Semiconductor
文件页数: 1/5页
文件大小: 154K
描述: DIODE SCHOTTKY 20A 100V TO220-3
标准包装: 1,000
系列: TMBS®
电压 - 在 If 时为正向 (Vf)(最大): 790mV @ 10A
电流 - 在 Vr 时反向漏电: 800µA @ 100V
电流 - 平均整流 (Io)(每个二极管): 10A
电压 - (Vr)(最大): 100V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: V20100C-E3/4W-ND
V20100C-E3/4WGI
V20100C, VF20100C, VB20100C, VI20100C
www.vishay.com
Vishay General Semiconductor
Revision: 14-Aug-13
1
Document Number: 88977
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF
= 0.50 V at I
F
= 5 A
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
? Solder bath temperature 275
°C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB and
TO-262AA?
Molding compound meets UL 94
V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102?
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
?
?
?
?
?
?
?
PRIMARY CHARACTERISTICS
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
IF(AV)
2 x 10 A
VRRM
100 V
IFSM
150 A
VF at IF
= 10 A 0.58 V
TJ
max. 150 °C
Diode variation Common cathode
TO-220AB
V20100C VF20100C1
32
2
3
1
K
TO-263AB
1
2
K
TO-262AA
PIN 1
PIN 2
PIN 3
K
PIN 1
PIN 2
K
HEATSINK
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
CASE
PIN 3
VI20100C
VB20100C
TMBS?
ITO-220AB
3
1
2
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20100C VF20100C VB20100C VI20100C UNIT
Maximum repetitive peak reverse voltage
VRRM
100 V
Maximum average forward rectified current (fig. 1)
per device
per diode 10IF(AV)
20
A
Peak forward surge current 8.3 ms single half?
sine-wave superimposed on rated load per diode
IFSM
150 A
Non-repetitive avalanche energy at TJ
= 25 °C, L = 60 mH per diode E
AS
150 mJ
Peak repetitive reverse current at tp
= 2 μs, 1 kHz,
?
TJ
= 38 °C ± 2 °C per diode
IRRM
1.0 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
VAC
1500 V
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150 °C
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