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参数资料
| 型号： | UPA1850GR-9JG |
| 厂商： | NEC Corp. |
| 英文描述： | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | P沟道MOS场效应晶体管开关 |
| 文件页数： | 3/8页 |
| 文件大小： | 65K |
| 代理商： | UPA1850GR-9JG |
Data Sheet D11818EJ2V0DS00
3
μ
PA1850
TYPICAL CHARACTERISTICS (T
A
= 25°C)
30
T
A
- Ambient Temperature -
C
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
FORWARD BIAS SAFE OPERATING AREA
10.0
100.0
I
D
1.0
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.1
0.01
Single Pulse
Mounted on Ceramic
Substrate of 5000 mm x 1.1mm
P
D
(FET1) : P
D
(FET2) = 1:1
I
D
(pulse)
I
D
(
DC
)
R
DSon
Lmted
(@V
GS
=
40
V
100ms
DC
10
ms
PW
=
1
ms
0
1
2
3
10
1
0.1
0.01
0.001
T
A
= 125 C
V
GS
- Gate to Source Voltage - V
V
DS
=
10 V
TRANSFER CHARACTERISTICS
I
D
75 C
25 C
25
C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
V
DS
=
10 V
I
D
=
1 mA
50
50
100
0
150
1.5
1
0.5
0
1
10
100
0.1
V
DS
=
10 V
I
D
- Drain Current - A
|
f
|
100
10
1
0.1
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
T
A
=
25
C
25
C
75
C
125
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
R
D
50
0.1
100
150
200
250
V
GS
=
2.5 V
1
10
100
T
A
= 125
C
75
C
25
C
25
C
#
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