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| 型号： | UPA2732UT1A-E1-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET LV 8HVSON |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 40A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.7 毫欧 @ 20A，10V |
| 闸电荷(Qg) @ Vgs： | 133nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3280pF @ 10V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-HVSON |
| 包装： | 标准包装 |
| 其它名称： | UPA2732UT1A-E1-AYDKR |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2732T1A
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The μ PA2732T1A is P-channel MOS Field Effect Transistor designed
for power management applications of notebook computers and Li-ion
PACKAGE DRAWING (Unit: mm)
battery protection circuit.
1
2
8
7
FEATURES
? Low on-state resistance
R DS(on)1 = 3.7 m Ω MAX. (V GS = ? 10 V, I D = ? 20 A)
R DS(on)2 = 6.7 m Ω MAX. (V GS = ? 4.5 V, I D = ? 20 A)
3
4
6 ± 0.2
5.4 ± 0.2
6
5
0.10 S
? Low C iss : C iss = 3280 pF TYP.
? Built-in gate protection diode
? Small and surface mount package (8pin HVSON)
1
ORDERING INFORMATION
0.2
μ PA2732T1A-E1-AZ
PART NUMBER
Note
PACKAGE
8pin HVSON
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
μ PA2732T1A-E2-AZ
Note
8pin HVSON
Note Pb-free (This product does not contain Pb in external electrode.)
3.65 ± 0.2
0.6 ± 0.15
0.7 ± 0.15
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C, All terminals are connected.)
Drain to Source Voltage (V GS = 0 V) V DSS
Gate to Source Voltage (V DS = 0 V) V GSS
? 30 V
m 20 V
EQUIVALENT CIRCUIT
Drain Current (pulse)
I D(pulse)
Total Power Dissipation
P T1
Total Power Dissipation (PW =10 sec)
P T2
Drain Current (DC) I D(DC)
Note1
Note2
Note2
m 40 A
m 160 A
1.5 W
4.6 W
Drain
Body
Channel Temperature T ch
150
° C
Gate
Diode
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
T stg
I AS
E AS
? 55 to +150 ° C
? 20 A
40 mJ
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. Mounted on a glass epoxy board (25.4 mm x 25.4 mm x 0.8 mm)
3. Starting T ch = 25 ° C, V DD = ? 15 V, R G = 25 Ω , L = 100 μ H, V GS = ? 20 → 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17393EJ1V1DS00 (1st edition)
Date Published January 2006 NS CP(K)
Printed in Japan
2005
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相关代理商/技术参数 |
参数描述 |
|---|---|
| UPA2735GR | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-channel MOSFET -30 V, -16 A, 5.0 m |
| UPA2735GR-E1-AT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-channel MOSFET -30 V, -16 A, 5.0 m |
| UPA2735GR-E2-AT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-channel MOSFET -30 V, -16 A, 5.0 m |
| UPA2736GR | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-channel MOSFET -30 V, -14 A, 7.0 m |
| UPA2736GR-E1-AT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-channel MOSFET -30 V, -14 A, 7.0 m |
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