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参数资料
| 型号： | UPA2732UT1A-E1-AY |
| 厂商： | Renesas Electronics America |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET LV 8HVSON |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 40A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3.7 毫欧 @ 20A，10V |
| 闸电荷(Qg) @ Vgs： | 133nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3280pF @ 10V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-HVSON |
| 包装： | 标准包装 |
| 其它名称： | UPA2732UT1A-E1-AYDKR |
μ PA2732T1A
ELECTRICAL CHARACTERISTICS (T A = 25 ° C, All terminals are connected.)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Note
Forward Transfer Admittance
SYMBOL
I DSS
I GSS
V GS(off)
| y fs |
TEST CONDITIONS
V DS = ? 30 V, V GS = 0 V
V GS = m 20 V, V DS = 0 V
V DS = ? 10 V, I D = ? 1 mA
V DS = ? 10 V, I D = ? 20 A
MIN.
? 1.0
30
TYP.
MAX.
? 1
m 10
? 2.5
UNIT
μ A
μ A
V
S
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Note
R DS(on)1
R DS(on)2
C iss
C oss
C rss
t d(on)
t r
t d(off)
V GS = ? 10 V, I D = ? 20 A
V GS = ? 4.5 V, I D = ? 20 A
V DS = ? 10 V
V GS = 0 V
f = 1 MHz
V DD = ? 15 V, I D = ? 20 A
V GS = ? 10 V
R G = 10 Ω
3.1
4.3
3280
1310
560
14
15
680
3.7
6.7
m Ω
m Ω
pF
pF
pF
ns
ns
ns
Fall Time
t f
440
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Q G
Q GS
Q GD
V DD = ? 24 V
V GS = ? 10 V
I D = ? 40 A
133
14
41
nC
nC
nC
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Note
V F(S-D)
t rr
Q rr
I F = 40 A, V GS = 0 V
I F = 40 A, V GS = 0 V
di/dt = 50 A/ μ s
0.85
88
59
1.2
V
ns
nC
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
TEST CIRCUIT 2 SWITCHING TIME
PG.
V GS = ? 20 → 0 V
R G = 25 Ω
50 Ω
L
V DD
PG.
R G
D.U.T.
R L
V DD
V GS
Wave Form
V GS ( ? )
10%
0
V GS
90%
V DS ( ? )
?
I D
I AS
BV DSS
V DS
V GS ( ? )
0
V DS
Wave Form
V DS
0
90%
10% 10%
90%
V DD
Starting T ch
τ
τ = 1 μ s
Duty Cycle ≤ 1%
t d(on)
t on
t r t d(off)
t off
t f
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I G = ? 2 mA
R L
2
PG.
50 Ω
V DD
Data Sheet G17393EJ1V1DS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| UPA2735GR | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-channel MOSFET -30 V, -16 A, 5.0 m |
| UPA2735GR-E1-AT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-channel MOSFET -30 V, -16 A, 5.0 m |
| UPA2735GR-E2-AT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-channel MOSFET -30 V, -16 A, 5.0 m |
| UPA2736GR | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-channel MOSFET -30 V, -14 A, 7.0 m |
| UPA2736GR-E1-AT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:P-channel MOSFET -30 V, -14 A, 7.0 m |
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