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| 型号： | UPA2756GR-E1-AT |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 60V 8-SOIC |
| 标准包装： | 2,500 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 105 毫欧 @ 2A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 260pF @ 10V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-PSOP |
| 包装： | 带卷 (TR) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2756GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The μ PA2756GR is Dual N-channel MOS Field Effect
PACKAGE DRAWING (Unit: mm)
Transistor designed for switching applications.
FEATURES
? Low on-state resistance
R DS(on)1 = 105 m ? MAX. (V GS = 10 V, I D = 2.0 A)
R DS(on)2 = 150 m ? MAX. (V GS = 4.0 V, I D = 2.0 A)
8
5
1 : Source 1
2 : Gate 1
7, 8: Drain 1
3 : Source 2
4 : Gate 2
5, 6: Drain 2
? Low C iss : C iss = 260 pF TYP.
? Built-in G-S protection diode against ESD
1
5.37 MAX.
4
6.0 ±0.3
4.4
0.8
? Small and surface mount package (Power SOP8)
ORDERING INFORMATION
1.27 0.78 MAX.
0.5 ±0.2
0.10
PART NUMBER
PACKAGE
0.40
+0.10
–0.05
0.12 M
μ PA2756GR
Power SOP8
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
V DSS
V GSS
60
±20
V
V
EQUIVALENT CIRCUIT
Drain Current (DC)
Note1
I D(DC)
±4.0
A
Drain 1
Drain 2
Drain Current (pulse)
Note2
I D(pulse)
±16
A
Total Power Dissipation (1 unit)
Total Power Dissipation (2 units)
Channel Temperature
Note1
Note1
P T1
P T2
T ch
1.6
2.0
150
W
W
°C
Gate 1
Gate
Body
Diode Gate 2
Gate
Body
Diode
Storage Temperature
Single Avalanche Current
Note3
T stg
I AS
? 55 to +150
4.0
°C
A
Protection
Diode
Source 1
Protection
Diode
Source 2
Single Avalanche Energy
Note3
E AS
1.6
mJ
Repetitive Avalanche Energy
Note4
E AR
1.6
mJ
Notes 1.
2.
3.
4.
Mounted on ceramic substrate of 2000 mm 2 x 2.2 mm
PW ≤ 10 μ s, Duty Cycle ≤ 1%
Starting T ch = 25°C, V DD = 30 V, R G = 25 ? , V GS = 20 → 0 V
I AR ≤ 4.0 A, T ch ≤ 150°C
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17407EJ1V0DS00 (1st edition)
Date Published January 2005 NS CP(K)
Printed in Japan
2005
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相关代理商/技术参数 |
参数描述 |
|---|---|
| UPA2756GR-E2-AT | 功能描述:MOSFET N-CH DUAL 60V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| UPA2757GR | 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| UPA2757GR-E1-AT | 功能描述:MOSFET N-CH DUAL 30V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| UPA2757GR-E2-AT | 功能描述:MOSFET N-CH DUAL 30V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| UPA2761UGR | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
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