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参数资料
| 型号： | UPA2757GR-E1-AT |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 30V 8-SOIC |
| 标准包装： | 2,500 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 36 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 400pF @ 10V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-PSOP |
| 包装： | 带卷 (TR) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2757GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The μ PA2757GR is Dual N-channel MOS Field Effect
Transistors designed for switching application.
8
5
1 : Source 1
2 : Gate 1
7, 8 : Drain 1
FEATURES
? Low on-state resistance
R DS(on)1 = 36.0 m Ω MAX. (V GS = 10 V, I D = 3.0 A)
3 : Source 2
4 : Gate 2
5, 6 : Drain 2
R DS(on)2 = 50.0 m Ω MAX. (V GS = 4.5 V, I D = 3.0 A)
? Low gate charge
1
5.37 MAX.
4
6.0 ± 0.3
4.4
0.8
Q G = 10 nC TYP. (V GS = 10 V)
? Built-in G-S protection diode
? Small and surface mount package (Power SOP8)
1.27 0.78 MAX.
0.5 ± 0.2
0.10
ORDERING INFORMATION
0.40
+0.10
–0.05
0.12 M
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
μ PA2757GR-E1-AT
μ PA2757GR-E2-AT
Note
Note
Pure Sn
Tape 2500
p/reel
Power SOP8
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
EQUIVALENT CIRCUIT
(1/2 circuit)
Drain
Body
Gate
Gate
Protection
Diode
Remark
Diode
Source
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge. V ESD ± 600 V TYP. (C = 100 pF, R = 1.5 k Ω )
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G18206EJ2V0DS00 (2nd edition)
Date Published November 2007 NS
Printed in Japan
The mark <R> shows major revised points.
2006, 2007
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| UPA2757GR-E2-AT | 功能描述:MOSFET N-CH DUAL 30V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| UPA2761UGR | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2761UGR-E1-AT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2761UGR-E2-AT | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
| UPA2762UGR | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR |
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