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参数资料
| 型号： | UPA675T-T2-A |
| 厂商： | Renesas Electronics America |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 16V SC-70 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 16V |
| 电流 - 连续漏极(Id) @ 25° C： | 100mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 12 欧姆 @ 10mA，4V |
| Id 时的 Vgs(th)（最大）： | 1.1V @ 10µA |
| 输入电容 (Ciss) @ Vds： | 10pF @ 3V |
| 功率 - 最大： | 200mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-88 |
| 包装： | 带卷 (TR) |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA675T
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The μ PA675T is an N-channel vertical MOS FET. Because it
PACKAGE DRAWING (Unit: mm)
0.2 - 0
0.15 - 0.05
can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
+0.1
+0.1
stereos and video cameras.
6
5
4
0 to 0.1
FEATURES
? Two MOS FET circuits in package the same size as SC-70
1
2
3
?
?
?
Automatic mounting supported
Gate can be driven by a 1.5 V power source
Because of its high input impedance, there’s no need to
consider a drive current
0.65 0.65
1.3
2.0 ±0.2
0.7
0.9 ±0.1
? Since bias resistance can be omitted, the number of
components required can be reduced
PIN CONNECTION
ORDERING INFORMATION
PART NUMBER
PACKAGE
6
5
4
μ PA675T
Note
SC-88 (SSP)
1.
Source 1
(S1)
Note Marking: SA
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
2.
3.
4.
5.
6.
Gate 1
Drain 2
Source 2
Gate 2
Drain 1
(G1)
(D2)
(S2)
(G2)
(D1)
Drain to Source Voltage (V GS = 0 V)
V DSS
16
V
1
2
3
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (Tc = 25°C)
V GSS
I D(DC)
±7.0
±0.1
V
A
Drain Current (pulse)
Note
I D(pulse)
±0.2
A
Total Power Dissipation (T C = 25°C)
Channel Temperature
Storage Temperature
P T
T ch
T stg
0.2
150
–55 to +150
W
°C
°C
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15454EJ1V0DS00 (1st edition)
Date Published May 2001 NS CP(K)
Printed in Japan
?
2001
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PDF描述 |
|---|---|
| UPA677TB-T2-A | MOSFET N-CH DUAL 20V SC-70 |
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| UPA679TB-T2-A | MOSFET N/P-CH 20V SC-70 |
| UPB1007K-E1-A | IC DOWNCONVERT DL 3V 36-QFN |
| UPB1008K-EVAL | EVAL BOARD FOR UPB1008K |
相关代理商/技术参数 |
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|---|---|
| UPA677TB | 制造商:NEC 制造商全称:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA677TB-T1-A | 功能描述:MOSFET DL N-CH 20V SC-88 6SSP RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| UPA677TB-T2-A | 功能描述:MOSFET N-CH DUAL 20V SC-70 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| UPA678TB | 制造商:NEC 制造商全称:NEC 功能描述:P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| UPA678TB-T1-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 20V 0.25A 6-Pin SC-88 T/R 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 20V 0.25A 6PIN SC-88 - Tape and Reel |
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