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参数资料
型号： uPSD3212CV
厂商： 意法半导体
英文描述： Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM(带8032微控制器内核和16Kbit SRAM的FLASH可编程系统器件)
中文描述： 闪存可编程系统设备与8032微控制器内核和16Kbit的SRAM（带8032微控制器内核和16Kbit SRAM的的闪存可编程系统器件）
文件页数： 86/151页
文件大小： 1194K
代理商： UPSD3212CV
uPSD3212C, uPSD3212CV
86/151
Power-down Instruction and Power-up Mode
Power-up Mode.
The PSD MODULE internal
logic is reset upon Power-up to the READ Mode.
Sector
Select
(FS0-FS3
CSBOOT1) must be held Low, and WRITE Strobe
(WR, CNTL0) High, during Power-up for maximum
security of the data contents and to remove the
possibility of a byte being written on the first edge
of WRITE Strobe (WR, CNTL0). Any WRITE cycle
initiation is locked when V
CC
is below V
LKO
.
READ
Under typical conditions, the MCU may read the
primary Flash memory or the secondary Flash
memory using READ operations just as it would a
ROM or RAM device. Alternately, the MCU may
use READ operations to obtain status information
about a Program or Erase cycle that is currently in
progress. Lastly, the MCU may use instructions to
read special data from these memory blocks. The
following sections describe these READ functions.
READ Memory Contents.
Primary Flash memo-
ry and secondary Flash memory are placed in the
READ Mode after Power-up, chip reset, or a
Reset Flash instruction (see Table 62, page 85).
The MCU can read the memory contents of the pri-
mary Flash memory or the
secondary Flash mem-
ory by using READ operations any time the READ
operation is not part of an instruction.
READ Memory Sector Protection Status.
The
primary Flash memory Sector Protection Status is
read with an instruction composed of 4 operations:
3 specific WRITE operations and a READ opera-
tion (see Table 62). During the READ operation,
address Bits A6, A1, and A0 must be '0,' '1,' and
'0,' respectively, while Sector Select (FS0-FS3 or
CSBOOT0-CSBOOT1) designates the Flash
memory sector whose protection has to be veri-
fied. The READ operation produces 01h if the
Flash memory sector is protected, or 00h if the
sector is not protected.
The sector protection status for all NVM blocks
(primary Flash memory or secondary Flash mem-
ory) can also be read by the MCU accessing the
Flash Protection registers in PSD I/O space. See
and
CSBOOT0-
the section entitled “Flash Memory Sector Pro-
tect,” page 91, for register definitions.
Reading the Erase/Program Status Bits.
The
Flash memory provides several status bits to be
used by the MCU to confirm the completion of an
Erase or Program cycle of Flash memory. These
status bits minimize the time that the MCU spends
performing these tasks and are defined in Table
63, page 87. The status bits can be read as many
times as needed.
For Flash memory, the MCU can perform a READ
operation to obtain these status bits while an
Erase or Program instruction is being executed by
the embedded algorithm. See the section entitled
“Programming Flash Memory,” page 88, for de-
tails.
Data Polling Flag (DQ7).
When erasing or pro-
gramming in Flash memory, the Data Polling Flag
Bit (DQ7) outputs the complement of the bit being
entered for programming/writing on the DQ7 Bit.
Once the Program instruction or the WRITE oper-
ation is completed, the true logic value is read on
the Data Polling Flag Bit (DQ7) (in a READ opera-
tion).
–
Data Polling is effective after the fourth WRITE
pulse (for a Program instruction) or after the
sixth WRITE pulse (for an Erase instruction). It
must be performed at the address being
programmed or at an address within the Flash
memory sector being erased.
–
During an Erase cycle, the Data Polling Flag
Bit (DQ7) outputs a '0.' After completion of the
cycle, the Data Polling Flag Bit (DQ7) outputs
the last bit programmed (it is a '1' after
erasing).
–
If the byte to be programmed is in a protected
Flash memory sector, the instruction is
ignored.
–
If all the Flash memory sectors to be erased
are protected, the Data Polling Flag Bit (DQ7)
is reset to '0' for about 100μs, and then returns
to the previous addressed byte. No erasure is
performed.
相关PDF资料
PDF描述
uPSD3212 Flash Programmable System Device with 8032 Microcontroller Core(嵌入高速“8032微控制器核”的Flash型可编程系统器件)
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相关代理商/技术参数
参数描述
UPSD3212CV-24T1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM
UPSD3212CV-24T6 功能描述:8位微控制器 -MCU 3.0V 512K 24MHz RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
UPSD3212CV-24T6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Flash Programmable System Devices with 8032 MCU with USB and Programmable Logic
UPSD3212CV-24U1T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM
UPSD3212CV-24U6 功能描述:8位微控制器 -MCU 3.0V 512K 24MHz RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
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