参数资料
型号: US6U37TR
厂商: Rohm Semiconductor
文件页数: 1/5页
文件大小: 0K
描述: MOSFET N-CH 30V 1.5A TUMT6
产品目录绘图: TUMT-6 Package Top
特色产品: ECOMOS? Series MOSFETs
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 二极管(隔离式)
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 1.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 240 毫欧 @ 1.5A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 1mA
闸电荷(Qg) @ Vgs: 2.2nC @ 4.5V
输入电容 (Ciss) @ Vds: 80pF @ 10V
功率 - 最大: 700mW
安装类型: 表面贴装
封装/外壳: 6-SMD,扁平引线
供应商设备封装: TUMT6
包装: 标准包装
产品目录页面: 1638 (CN2011-ZH PDF)
其它名称: US6U37DKR
US6U37
Transistors
2.5V Drive Nch+SBD MOSFET
US6U37
Structure
Silicon N-channel MOSFET /
Schottky barrier diode
Features
1) Nch MOSFET and schottky barrier diode
are put in TUMT6 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low V F schottky barrier diode.
Applications
Switching
Dimensions (Unit : mm)
TUMT6
Abbreviated symbol : U37
Inner circuit
Package specifications
Package
Taping
(6)
(5)
(4)
Type
Code
TR
? 2
US6U37
Basic ordering unit (pieces)
3000
? 1
(1)Gate
(2)Source
(3)Cathode
Absolute maximum ratings (Ta=25 ° C)
<MOSFET>
(1) (2)
? 1 ESD protection diode
? 2 Body diode
(3)
(4)Anode
(5)Anode
(6)Drain
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
30
± 12
Unit
V
V
Drain current
Source current
(Body diode)
Channel temperature
Continuous
Pulsed
Continuous
Pulsed
I D
I DP ? 1
I S
I SP ? 1
Tch
± 1.5
± 6.0
0.6
6.0
150
A
A
A
A
° C
Power dissipation
P D
? 2
0.7
W / ELEMENT
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Mounted on a ceramic board
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Symbol
V RM
V R
I F
Limits
25
20
0.7
Unit
V
V
A
Forward current surge peak
Junction temperature
Power dissipation
I FSM
Tj
P D
? 1
? 2
10
150
0.5
A
° C
W / ELEMENT
? 1 60Hz 1cycle
? 2 Mounted on ceramic board
1/4
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