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参数资料
| 型号： | V53C8125HT50 |
| 厂商： | MOSEL-VITELIC |
| 元件分类： | DRAM |
| 英文描述： | 128K X 8 FAST PAGE DRAM, 50 ns, PDSO28 |
| 封装： | TSOP1-28 |
| 文件页数： | 13/17页 |
| 文件大小： | 1527K |
| 代理商： | V53C8125HT50 |
MOSEL VITELIC
V53C8125H
5
V53C8125H Rev. 1.7 August 1998
AC Characteristics
T
A = 0°C to 70°C, VCC = 5 V ±10%, VSS = 0V unless otherwise noted
AC Test conditions, input pulse levels 0 to 3V
#
Symbol
Parameter
30
35
40
45
50
Unit Notes
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
1tRAS
RAS Pulse Width
30
75K
35
75K
40
75K
45
75K
50
75K
ns
2tRC
Read or Write Cycle Time
65
70
75
80
90
ns
3tRP
RAS Precharge Time
25
30
ns
4tCSH
CAS Hold Time
30
35
40
45
50
ns
5tCAS
CAS Pulse Width
56789
ns
6tRCD
RAS to CAS Delay
15
20
16
24
17
28
18
32
19
36
ns
7tRCS
Read Command Setup Time
00000
ns
4
8tASR
Row Address Setup Time
00000
ns
9tRAH
Row Address Hold Time
56789
ns
10
tASC
Column Address Setup Time
00000
ns
11
tCAH
Column Address Hold Time
55567
ns
12
tRSH (R)
RAS Hold Time (Read Cycle)
10
ns
13
tCRP
CAS to RAS Precharge Time
55555
ns
14
tRCH
Read Command Hold Time
Referenced to CAS
00
000
ns
5
15
tRRH
Read Command Hold Time
Referenced to RAS
0
0000
ns
5
16
tROH
RAS Hold Time
Referenced to OE
6789
10
ns
17
tOAC
Access Time from OE
10
11
12
13
14
ns
12
18
tCAC
Access Time from CAS
10
11
12
13
14
ns
6,7,14
19
tRAC
Access Time from RAS
30
35
40
45
50
ns
6, 8, 9
20
tCAA
Access Time from Column
Address
16
18
20
22
24
ns
6,7,10
21
tLZ
OE or CAS to Low-Z Output
00000
ns
16
22
tHZ
OE or CAS to High-Z Output
0506060708
ns
16
23
tAR
Column Address Hold Time from
RAS
26
28
30
35
40
ns
24
tRAD
RAS to Column Address
Delay Time
10
14
11
17
12
20
13
23
14
26
ns
11
25
tRSH (W)
RAS or CAS Hold Time in
Write Cycle
10
ns
26
tCWL
Write Command to CAS
Lead Time
10
11
12
13
14
ns
27
tWCS
Write Command Setup Time
00000
ns
12, 13
28
tWCH
Write Command Hold Time
55567
ns
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