参数资料
型号: V54C3128164VBI6
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封装: GREEN, PLASTIC, TSOP2-54
文件页数: 18/56页
文件大小: 734K
代理商: V54C3128164VBI6
25
V54C3128(16/80/40)4VB Rev. 1.5 March 2006
ProMOS TECHNOLOGIES
V54C3128(16/80/40)4VB
5. Burst Write Operation
(Burst Length = 4, CAS latency = 2, 3)
6.1 Write Interrupted by a Write
(Burst Length = 4, CAS latency = 2, 3)
COMMAND
NOP
WRITE A
NOP
I/O’s
DIN A0
DIN A1
DIN A2
DIN A3
NOP
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
Extra data is ignored after
The first data element and the Write
are registered on the same clock edge.
termination of a Burst.
don’t care
COMMAND
NOP
WRITE A
WRITE B
NOP
I/O’s
DIN A0
DIN B0
DIN B1
DIN B2
NOP
DIN B3
CLK
T0
T2
T1
T3
T4
T5
T6
T7
T8
1 Clk Interval
tCCD
相关PDF资料
PDF描述
V54C3128164VBS8PC 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA60
V54C3128804VAS7PC 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PBGA60
V54C3128804VCLC7E 16M X 8 SYNCHRONOUS DRAM, 7 ns, PBGA54
V54C3128804VCT7PCE 16M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
V54C316162VAT10 1M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO50
相关代理商/技术参数
参数描述
V54C3128164VBI7 制造商:PROMOS 功能描述: 制造商:ProMOS Technologies Inc 功能描述:8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
V54C3128164VS 制造商:MOSEL 制造商全称:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
V54C3128164VT 制造商:MOSEL 制造商全称:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4
V54C3128404VBGA 制造商:MOSEL 制造商全称:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
V54C3128404VS 制造商:MOSEL 制造商全称:MOSEL 功能描述:128Mbit SDRAM 3.3 VOLT, TSOP II / SOC PACKAGE 8M X 16, 16M X 8, 32M X 4