参数资料
型号: V58C2256164SBLJ5B
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 16M X 16 DDR DRAM, 0.65 ns, PBGA60
封装: LEAD FREE, MO-233, FBGA-60
文件页数: 3/62页
文件大小: 983K
代理商: V58C2256164SBLJ5B
11
ProMOS TECHNOLOGIES
V58C2256(804/404/164)SB
V58C2256(804/404/164)SB Rev. 1.0 November 2003
Mode Register Set Timing
Burst Mode Operation
Burst Mode Operation is used to provide a constant flow of data to memory locations (Write cycle), or from
memory locations (Read cycle). Two parameters define how the burst mode will operate: burst sequence and
burst length. These parameters are programmable and are determined by address bits A0—A3 during the
Mode Register Set command. Burst type defines the sequence in which the burst data will be delivered or
stored to the SDRAM. Two types of burst sequence are supported: sequential and interleave. The burst
length controls the number of bits that will be output after a Read command, or the number of bits to be input
after a Write command. The burst length can be programmed to values of 2, 4, or 8. See the Burst Length
and Sequence table below for programming information.
Burst Length and Sequence
Burst Length
Starting Length (A2, A1, A0)
Sequential Mode
Interleave Mode
2
xx0
0, 1
xx1
1, 0
4
x00
0, 1, 2, 3
x01
1, 2, 3, 0
1, 0, 3, 2
x10
2, 3, 0, 1
x11
3, 0, 1, 2
3, 2, 1, 0
8
000
0,1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 4, 5, 6, 7, 0
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 4, 5, 6, 7, 0, 1
2, 3, 0, 1, 6, 7, 4, 5
011
3, 4, 5, 6, 7, 0, 1, 2
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6, 7, 0, 1, 2, 3, 4
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7, 0, 1, 2, 3, 4, 5
6, 7, 4, 5, 2, 3, 0, 1
111
7, 0, 1, 2, 3, 4, 5, 6
7, 6, 5, 4, 3, 2, 1, 0
T5
T0
T1
T2
T3
T4
T6
T7
T8
tRP
tMRD
tCK
Pre- All
MRS/EMRS
ANY
Mode Register set (MRS) or Extended Mode Register Set (EMRS) can be issued only when all banks are in the idle state.
CK, CK
Command
If a MRS command is issued to reset the DLL, then an additional 200 clocks must occur prior to issuing any new command
T9
to allow time for the DLL to lock onto the clock.
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