参数资料
型号: V58C2256404SCLS7I
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 64M X 4 DDR DRAM, 0.75 ns, PBGA60
封装: MO-233, FBGA-60
文件页数: 31/61页
文件大小: 917K
代理商: V58C2256404SCLS7I
37
ProMOS TECHNOLOGIES
V58C2256(804/404/164)SC*I
V58C2256(804/404/164)SC*I Rev. 1.3 March 2006
Half clock period
tHP
tCH,
tCL
tCH,
tCL
tCH,
tCL
tCH,
tCL
ns
34
Data-out high-impedance window from
CK/CK
tHZ
-0.65
+0.65
-0.65
+0.65
-0.7
+0.7
-0.75
+0.75
ns
18
Data-out low-impedance window from
CK/CK
tLZ
-0.65
+0.65
-0.65
+0.65
-0.7
+0.7
-0.75
+0.75
ns
18
Address and control input hold time
(fast slew rate)
tIH
F
0.60
0.75
0.90
ns
14
Address and control input setup time
(fast slew rate)
tIS
F
0.60
0.75
0.90
ns
14
Address and control input hold time
(slow slew rate)
tIH
S
0.70
0.80
1
ns
14
Address and control input setup time
(slow slew rate)
tIS
S
0.70
0.80
1
ns
14
LOAD MODE REGISTER command cy-
cle time
tMRD
2
tCK
DQ-DQS hold, DQS to first DQ to go non-
valid,
per access
tQH
tHP
-tQHS
tHP
-tQHS
tHP
-tQHS
tHP
-tQHS
ns
25, 26
Data hold skew factor
tQHS
0.50
0.55
0.75
ns
ACTIVE to PRECHARGE command
tRAS
40
70,000
40
70,000
42
120,00
0
45
120,00
0
ns
35
ACTIVE to READ with Auto precharge
command
tRAP
1515
1815
ns
46
ACTIVE to ACTIVE/AUTO REFRESH
command period
tRC
60
65
ns
AUTO REFRESH command period
tRFC
7070
7275
ns
50
ACTIVE to READ or WRITE delay
tRCD
15
18
15
ns
PRECHARGE command period
tRP
15
18
15
ns
DQS read preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
0.9
1.1
tCK
42
DQS read postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
ACTIVE bank a to ACTIVE bank b com-
mand
tRRD
10
12
15
ns
DQS write preamble
tWPRE
0.25
tCK
DQS write preamble setup time
tWPRES
0
ns
20, 21
DQS write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
0.4
0.6
tCK
19
Write recovery time
tWR
15
ns
Internal WRITE to READ command delay
tWTR
2
1
tCK
Data valid output window
na
tQH - tDQSQ
tQH - tDQSQ tQH - tDQSQ
ns
25
AC CHARACTERISTICS
-5B
-5
-6
-7
PARAMETER
SYM-
BOL
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX UNITS NOTES
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