参数资料
型号: V827464K24SATGD3
厂商: PROMOS TECHNOLOGIES INC
元件分类: DRAM
英文描述: 64M X 72 DDR DRAM MODULE, 0.65 ns, DMA184
封装: DIMM-184
文件页数: 1/14页
文件大小: 206K
代理商: V827464K24SATGD3
1
V827464K24SA
64M x 72 HIGH PERFORMANCE
UNBUFFERED ECC DDR SDRAM MODULE
V827464K24SA Rev. 1.2 April 2006
Features
■ 184 Pin Unbuffered 67,108,864 x 72 bit
Organization DDR SDRAM Modules
■ Utilizes High Performance 32M x 8 DDR
SDRAM in TSOPII-66 Packages
■ Single +2.5V (± 0.2V) Power Supply
■ Single +2.6V (± 0.1V) Power Supply for DDR400
■ Programmable CAS Latency, Burst Length, and
Wrap Sequence (Sequential & Interleave)
■ Auto Refresh (CBR) and Self Refresh
■ All Inputs, Outputs are SSTL-2 Compatible
■ 8196 Refresh Cycles every 64 ms
■ Serial Presence Detect (SPD)
■ DDR SDRAM Performance
Description
The
V827464K24SA
memory
module
is
organized 67,108,864 x 72 bits in a 184 pin memory
module. The 64M x 72 memory module uses 18
ProMOS 32M x 8 DDR SDRAM. The x72 modules
are ideal for use in high performance computer
systems where increased memory density and fast
access times are required.
Component Used
-6
-7
-75
-8
tCK
Clock Frequency
(max.)
166
(PC333)
143
(PC266A)
133
(PC266B)
125
(PC200)
tAC
Clock Access Time
CAS Latency = 2.5
67
7.5
8
Module Speed
D0
D3
C0
B1
B0
Units
Clock Frequency (max.)
200
(PC400A)
200
(PC400B)
166
(PC333)
143
(PC266A)
133
(PC266B)
MHz
tCK
Clock Cycle Time CAS Latency = 2
7.5
10
ns
Clock Cycle Time CAS Latency = 2.5
5
6
7
7.5
ns
Clock Cycle Time CAS Latency = 3
5
-
ns
tRCD
tRCD parameter
3
2
3
CLK
tRP
tRP parameter
3
2
3
CLK
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