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参数资料
| 型号： | VBT3045CBP-E3/8W |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 84K |
| 描述： | DIODE SCHOTTKY 15A 45V |
| 特色产品： | TMBS? Rectifiers |
| 标准包装： | 1 |
| 系列： | TMBS® |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 570mV @ 15A |
| 电流 - 在 Vr 时反向漏电： | 2mA @ 45V |
| 电流 - 平均整流 (Io)（每个二极管）： | 15A |
| 电压 - (Vr)（最大）： | 45V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263AB |
| 包装： | 标准包装 |
| 其它名称： | VBT3045CBP-E3/8WGIDKR |
VBT3045CBP
www.vishay.com
Vishay General Semiconductor
Revision: 22-May-12
1
Document Number: 89373
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF
= 0.30 V at I
F
= 5.0 A
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
?TJ
200 °C max. in solar bypass mode application
? Material categorization: For
definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
Notes
(1)
With heatsink
(2)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
45 V
IFSM
200 A
VF at IF
= 15 A 0.39 V
TOP
max. (AC mode) 150 °C
TJ
max. (DC forw
ard current) 200 °C
TO-263AB
1
2
K
PIN 1
PIN 2
K
HEATSINK
VBT3045CBP
TMBS?
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VBT3045CBP UNIT
Maximum repetitive peak reverse voltage VRRM
45 V
Maximum average forward rectified current (fig. 1)
per device
IF(AV)
(1)
per diode 15
30
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
200 A
Operating junction and storage temperature range (AC mode) TOP, TSTG
- 40 to + 150 °C
Junction temperature in DC forward current
without reverse bias, t ?
1 h
TJ
(2)
?
200 °C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| VBT3045C-E3/4W | 制造商:Vishay Semiconductors 功能描述:30A,45V,TRENCH SKY RECT. |
| VBT3045C-E3/8W | 功能描述:肖特基二极管与整流器 30A 45V DUAL TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| VBT3060C-E3/4W | 制造商:Vishay Semiconductors 功能描述:30A,60V,DUAL TRENCH SKY RECT. |
| VBT3060C-E3/8W | 制造商:Vishay Semiconductors 功能描述:30A,60V,DUAL TRENCH SKY RECT. |
| VBT3060G-E3/4W | 制造商:Vishay Semiconductors 功能描述:30A,60V,DUAL TRENCH SKY RECT. |
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