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| 型号： | VFT1045CBP-M3/4W |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 76K |
| 描述： | DIODE SCHOTTKY 5A 45V |
| 特色产品： | TMBS? Rectifiers |
| 标准包装： | 1,000 |
| 系列： | TMBS® |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 580mV @ 5A |
| 电流 - 在 Vr 时反向漏电： | 500µA @ 45V |
| 电流 - 平均整流 (Io)（每个二极管）： | 5A |
| 电压 - (Vr)（最大）： | 45V |
| 二极管类型： | 肖特基 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | ITO-220AB |
| 包装： | 管件 |
| 其它名称： | VFT1045CBP-M3/4WGI |
Document Number: 89367 For technical questions within your
region, please contact one of
the following: www.vishay.com
Revision: 27-Oct-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Trench MOS Barrier Schottky Rectifierfor PV Solar Cell Bypass Protection
Ultra Low VF
= 0.34 V at I
F
= 2.5 A
VFT1045CBP
Vishay General Semiconductor
New Product
FEATURES
? Trench MOS Schottky technology
? Low forward voltage drop, low power losses
? High efficiency operation
? Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
? Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
?
Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94
V-0 flammabi
lity rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
Notes
(1)
With heatsink
(2)
Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
45 V
IFSM
100 A
VF at IF
= 5.0 A 0.41 V
TOP
max. 150 °C
PIN 1
PIN 2
PIN 3
TMBS?
ITO-220AB
3
1
2
VFT1045CBP
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VFT1045CBP UNIT
Maximum repetitive peak reverse voltage VRRM
45 V
Maximum average forward rectified current (fig. 1)
per device
IF(AV)
(1)
per diode 5.0
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
100 A
Isolation voltage from termal to heatsink, t = 1 min VAC
1500 V
Operating junction and storage temperature range TOP, TSTG
- 40 to + 150 °C
Junction temperature in DC forward current
without reverse bias, t ≤
1 h
TJ
(2)
≤
200 °C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| VFT1045C-M3/4W | 功能描述:肖特基二极管与整流器 10A 45V DUAL TrenchMOS RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| VFT1060C | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
| VFT1060C-E3/4W | 制造商:Vishay Semiconductors 功能描述:10A,60V, DUAL TRENCH SKY RECT. |
| VFT1060C-M3/4W | 制造商:Vishay Semiconductors 功能描述:10A,60V,TRENCH SKY RECT. |
| VFT1060C-M3-4W | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
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