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| 型号： | VEC2315-TL-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 2.5A VEC8 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | * |
| 闸电荷(Qg) @ Vgs： | 11nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 420pF @ 20V |
| 功率 - 最大： | 900mW |
| 安装类型： | * |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
Ordering number : EN8699A
VEC2315
P-Channel Power MOSFET
–60V, –2.5A, 137m Ω , Dual VEC8
Features
http://onsemi.com
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ON-resistance RDS(on)1=105m Ω (typ.)
4V drive
High-density mounting
Protection diode in
Halogen free compliance
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--60
±20
--2.5
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
IDP
PD
PT
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm) 1unit
When mounted on ceramic substrate (900mm 2 × 0.8mm)
--10
0.9
1.0
150
--55 to +150
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7012-002
Product & Package Information
? Package : VEC8
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
8
7
6 5
0.3
0.15
VEC2315-TL-H
Packing Type : TL
Marking
UM
LOT No.
1
2
3
4
TL
0.65
2.9
1 : Source1
Electrical Connection
2 : Gate1
3 : Source2
8
7
6
5
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
VEC8
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
80812 TKIM/30712PA TKIM TC-00002731 No.8699-1/7
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