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参数资料
| 型号： | W19B160BTB7H |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 1M X 16 FLASH 2.7V PROM, 7 ns, PBGA48 |
| 封装： | 6 X 8 MM, 0.80 MM PITCH, GREEN, TFBGA-48 |
| 文件页数： | 26/47页 |
| 文件大小： | 628K |
| 代理商： | W19B160BTB7H |
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W19B160BT/B DATA SHEET
- 32 -
9.3 DC CHARACTERISTICS
LIMITS
PARAMETER
SYM.
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Input Load Current
ILI
VIN = VSS to VDD, VDD = VDD
(Max.)
-
± 1.0
μA
A9 Input Load Current
ILIT
VDD = VDD (Max.), A9 = VID
(Max.)
-
35
μA
Output Leakage Current
ILO
VOUT = VSS to VDD , VDD = VDD
(Max.)
-
± 1.0
μA
10 MHz
15
25
mA
5 MHz
-
9
16
mA
#CE = VIL , #OE = VIH
Byte Mode
1 MHz
2
4
mA
10 MHz
18
25
mA
5 MHz
9
16
mA
VDD Active Read Current
(Note 1,2)
ICC1
#CE = VIL , #OE = VIH
Word Mode
1 MHz
2
4
mA
VDD Active Current
(Note 2,3,4)
ICC2
#CE = VIL , #OE = VIH
-
20
30
mA
VDD Standby Current
(Note 2,5)
ICC3
#RESET , #CE = VDD
± 0.3V
-
0.2
5
μA
VDD Reset Current (Note 2,5)
ICC4
#RESET = VSS
± 0.3V
-
0.2
5
μA
Automatic Sleep Mode Current
(Note 2,4,5,6)
ICC5
VIH = VDD
± 0.3V, VIL = VSS ±
0.3V
-
0.2
5
μA
Input Low Voltage
VIL
-0.5
-
0.8
V
Input High Voltage
VIH
0.7 x VDD -
VDD+0.3 V
Voltage for Auto-select and
Temporary Sector Unprotected
VID
VDD =3.0V
± 10%
8.5
-
11.5
V
Output Low Voltage
VOL
IOL = 4.0 mA, VDD = VDD (Min.)
-
0.45
V
VOH1 IOL = -2.0 mA, VDD = VDD (Min.)
2.4
-
V
Output High Voltage
VOH2 IOH = -100
μA, VDD = VDD (Min.)
VDD -0.4
-
V
Notes:
1. The ICC current is typically less than 2 mA/MHz, with #OE at VIH. Typical VDD is 3.0V.
2. Maximum ICC specifications are tested with VDD = VDD max.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode
current is 200 nA.
5. For temperature >70 degree C, Vih(Max.)=Vdd+0.1V and Vil(Min)=Vss-0.1V.
6. Not 100% tested
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W19B160BTBH7H | 制造商:WINBOND 制造商全称:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory |
| W19B160BTBM7H | 制造商:WINBOND 制造商全称:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory |
| W19B160BTT7H | 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations, Fast write operation |
| W19B160TB7H7H | 制造商:WINBOND 制造商全称:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory |
| W19B160TB7M7H | 制造商:WINBOND 制造商全称:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory |
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