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参数资料
| 型号： | W19B160BTB7H |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 1M X 16 FLASH 2.7V PROM, 7 ns, PBGA48 |
| 封装： | 6 X 8 MM, 0.80 MM PITCH, GREEN, TFBGA-48 |
| 文件页数： | 7/47页 |
| 文件大小： | 628K |
| 代理商： | W19B160BTB7H |
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W19B160BT/B DATA SHEET
Publication Release Date Dec,30, 2008
- 15 -
Revision A8
After an erase command sequence is written, if all sectors selected for erasing are protected, #Data
Polling on DQ7 is active for about 100S, and then the device returns to the read mode. If not all
selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and
ignores the selected sectors that are protected. However, if the system reads DQ7 at an address
within a protected sector, the status may not be valid.
Just before the completion of an Embedded Program or Erase operation, DQ7 may change
asynchronously with DQ0-DQ6 while Output Enable (#OE) is set to low. That is, the device may
change from providing status information to valid data on DQ7. Depending on when it samples the
DQ7 output, the system may read the status or valid data. Even if the device has completed the
program or erase operation and DQ7 has valid data, the data outputs on DQ0-DQ6 may be still
invalid. Valid data on DQ7-DQ0 will appear on successive read cycles.
6.3.2
RY/#BY: Ready/#Busy
The RY/#BY is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is
in progress or complete. The RY/#BY status is valid after the rising edge of the final #WE pulse in the
command sequence. Since RY/#BY is an open-drain output, several RY/#BY pins can be tied together
in parallel with a pull-up resistor to VDD.
When the output is low (Busy), the device is actively erasing or programming. When the output is high
(Ready), the device is in the read mode.
6.3.3
DQ6: Toggle Bit
Toggle Bit on DQ6 indicates whether an Embedded Program or Erase algorithm is in progress or
complete. Toggle Bit may be read at any address, and is valid after the rising edge of the final #WE
pulse in the command sequence (before the program or erase operation), and during the sector erase
time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address
cause DQ6 to toggle. The system may use either #OE or #CE to control the read cycles. Once the
operation has completed, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6
toggles for about 100S, and then returns to reading array data. If not all selected sectors are
protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected
sectors which are protected.
If a program address falls within a protected sector, DQ6 toggles for about 1
μs after the program
command sequence is written, and then returns to reading array data.
6.3.4
Reading Toggle Bits DQ6/DQ2
Whenever the system initially starts to read toggle bit status, it must read DQ0
DQ7 at least twice in a
row to determine whether a toggle bit is toggling or not. Typically, the system would note and store the
value of the toggle bit after the first read. While after the second read, the system would compare the
new value of the toggle bit with the first one. If the toggle bit is not toggling, the device has completed
the program or erase operation. The system can read array data on DQ0
DQ7 on the following read
cycle.
However, if after the initial two read cycles, the system finds that the toggle bit is still toggling, the
system also should note whether the value of DQ5 is high or not(see the section on DQ5). If DQ5 is
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W19B160BTBH7H | 制造商:WINBOND 制造商全称:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory |
| W19B160BTBM7H | 制造商:WINBOND 制造商全称:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory |
| W19B160BTT7H | 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations, Fast write operation |
| W19B160TB7H7H | 制造商:WINBOND 制造商全称:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory |
| W19B160TB7M7H | 制造商:WINBOND 制造商全称:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory |
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