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参数资料
| 型号： | W19B160BTB7H |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 1M X 16 FLASH 2.7V PROM, 7 ns, PBGA48 |
| 封装： | 6 X 8 MM, 0.80 MM PITCH, GREEN, TFBGA-48 |
| 文件页数： | 34/47页 |
| 文件大小： | 628K |
| 代理商： | W19B160BTB7H |
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W19B160BT/B DATA SHEET
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1. GENERAL DESCRIPTION
The W19B160B is a 16Mbit, 2.7~3.6 volt CMOS flash memory organized as 2M
× 8 or 1M × 16 bits.
For flexible erase capability, the 16Mbits of data are divided into one 16Kbyte, two 8Kbyte, one
32Kbyte, and thirty-one 64Kbyte sectors. The word-wide (
× 16) data appears on DQ15-DQ0, and
byte-wide (
× 8) data appears on DQ7DQ0. The device can be programmed and erased in-system
with a standard 2.7~3.6V power supply. A 12-volt VPP is not required. The unique cell architecture of
the W19B160B results in fast program/erase operations with extremely low current consumption. The
device can also be programmed and erased by using standard EPROM programmers.
2. FEATURES
Performance
2.7~3.6-volt write (program and erase) operations
Fast write operation
Sector erase time: 0.7s (Typical)
Chip erases time: 25 s (Typical)
Byte/Word programming time: 5/7 s (Typical)
Read access time: 70 ns
Typical program/erase cycles:
100K
Twenty-year data retention
Ultra low power consumption
Active current (Read): 9mA (Typical)
Active current (Program/erase): 20mA (Typical)
Standby current: 0.2 μA (Typical)
Architecture
Sector erases architecture
One 16Kbyte, two 8Kbyte, one 32Kbyte, and thirty-one 64Kbyte sectors
Top or bottom boot block configurations available
Supports full chip erase
JEDEC standard byte-wide and word-wide pin-outs TTL compatible I/O
Manufactured on WinStack-S 0.13m process technology
Available packages: 48-pin TSOP
Software Features
Compatible with common Flash Memory Interface (CFI) specification
Flash device parameters stored directly on the device
Allows software driver to identify and use a variety of different current and future Flash products
End of program detection
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W19B160BTBH7H | 制造商:WINBOND 制造商全称:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory |
| W19B160BTBM7H | 制造商:WINBOND 制造商全称:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory |
| W19B160BTT7H | 制造商:WINBOND 制造商全称:Winbond 功能描述:2.7~3.6-volt write (program and erase) operations, Fast write operation |
| W19B160TB7H7H | 制造商:WINBOND 制造商全称:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory |
| W19B160TB7M7H | 制造商:WINBOND 制造商全称:Winbond 功能描述:16Mbit, 2.7~3.6 volt CMOS flash memory |
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