参数资料
型号: W24257C-70LL
厂商: WINBOND ELECTRONICS CORP
元件分类: SRAM
英文描述: 32K X 8 STANDARD SRAM, 70 ns, PDIP28
封装: 0.600 INCH, PLASTIC, DIP-28
文件页数: 4/11页
文件大小: 211K
代理商: W24257C-70LL
Preliminary W24257C
- 2 -
TRUTH TABLE
CS
OE
WE
MODE
I/O1
I/O8
VDD CURRENT
H
X
Not Selected
High Z
ISB, ISB1
L
H
Output Disable
High Z
IDD
L
H
Read
Data Out
IDD
L
X
L
Write
Data In
IDD
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Supply Voltage to VSS Potential
-0.5 to +7.0
V
Input/Output to VSS Potential
-0.5 to VDD +0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperature
-65 to +150
°C
Operating Temperature
0 to +70
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
Operating Characteristics
(VDD = 5V
±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Input Low Voltage
VIL
-
-0.5
-
+0.8
V
Input High Voltage
VIH
-
+2.2
-
VDD +0.5
V
Input Leakage Current
ILI
VIN = VSS to VDD
-2
-
+2
A
Output Leakage
Current
ILO
VI/O = VSS to VDD, CS = VIH
(min.) or OE = VIH (min.) or
WE = VIL (max.)
-2
-
+ 2
A
Output Low Voltage
VOL
IOL = +4.0 mA
-
0.4
V
Output High Voltage
VOH
IOH = -1.0 mA
2.4
-
V
Operating Power
Supply Current
IDD
CS = VIL (min.),
I/O = 0 mA
70
-
80
mA
Cycle = min.,
Duty = 100%
100
-
70
mA
Standby Power
Supply Current
ISB
CS = VIH (min.)
Cycle = min., Duty = 100%
-
3
mA
ISB1
CS
≥ VDD -0.2V
LL
-
50
A
L
-
100
A
Note: Typical characteristics are at VDD = 5V, TA = 25
° C.
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