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参数资料
| 型号： | W24B02B-70LI |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | SRAM |
| 英文描述： | 256K X 8 STANDARD SRAM, 70 ns, PBGA48 |
| 封装： | TFBGA-48 |
| 文件页数： | 4/11页 |
| 文件大小： | 194K |
| 代理商： | W24B02B-70LI |
Preliminary W24B02
- 2 -
TRUTH TABLE
#CS
#OE
#WE
MODE
I/O1
I/O8
VDD CURRENT
H
X
Not Selected
High Z
ISB, ISB1
L
H
Output Disable
High Z
IDD
L
H
2 Bytes Read
DOUT
IDD
L
H
Lower Byte Read
DOUT
IDD
L
H
Upper Byte Read
High Z
IDD
L
X
L
2 Bytes Write
DIN
IDD
L
X
L
Lower Byte Write
DIN
IDD
L
X
L
Upper Byte Write
High Z
IDD
X
Not Selected
High Z
ISB, ISB1
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
Supply Voltage to VSS Potential
-0.5 to +4.6
V
Input/Output to VSS Potential
-0.5 to VDD +0.5
V
Allowable Power Dissipation
1.0
W
Storage Temperature
-65 to +150
°C
LE
-20 to 85
°C
Operating Temperature
LI
-40 to 85
°C
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
Operating Characteristics
(VSS = 0V; TA (
°C) = -20 to 85 for LE, -40 to 85 for LI)
W24B02
PARAMETER
SYM.
TEST
CONDITIONS
MIN.
MAX.
UNIT
Operating Power Voltage
VDD
-
2.7
3.6
V
Input Low Voltage
VIL
-
-0.2
+0.4
V
Input High Voltage
VIH
-
+2.2
VDD +0.3
V
Input Leakage Current
ILI
VIN = VSS to VDD
-1
+1
A
Output Leakage Current
ILO
VI/O = VSS to VDD; #CS = VIH
(min.) or #OE = VIH (min.)
or #WE = VIL (max.)
-1
+1
A
Output Low Voltage
VOL
IOL = +0.1 mA
-
0.4
V
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