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参数资料
| 型号： | W25Q32BVSSIP |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 32M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 0.208 INCH, GREEN, SOIC-8 |
| 文件页数： | 43/79页 |
| 文件大小： | 1090K |
| 代理商： | W25Q32BVSSIP |
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W25Q32BV
- 48 -
7.2.28 Erase / Program Resume (7Ah)
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase
operation or the Page Program operation after an Erase/Program Suspend. The Resume instruction “7Ah”
will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY bit
equals to 0. After issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will be set from
0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will complete the
program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume instruction “7Ah”
will be ignored by the device. The Erase/Program Resume instruction sequence is shown in Figure 26.
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be
issued within a minimum of time of “tSUS” following a previous Resume instruction.
/CS
CLK
DI
(IO
0)
Mode 0
Mode 3
0
1
2
3
4
5
6
7
Instruction (7Ah)
Mode 0
Mode 3
Resume previously
suspended Program or
Erase
Figure 26. Erase/Program Resume Instruction Sequence
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相关代理商/技术参数 |
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|---|---|
| W25Q32BVTCAG | 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q32BVTCAP | 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q32BVTCIG | 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q32BVTCIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q32BVZEAG | 制造商:WINBOND 制造商全称:Winbond 功能描述:3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
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