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参数资料
| 型号： | W25Q40BWSNIG |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | PROM |
| 英文描述： | 4M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封装： | 3.81 MM, GREEN, PLASTIC, SOIC-8 |
| 文件页数： | 42/70页 |
| 文件大小： | 2088K |
| 代理商： | W25Q40BWSNIG |
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W25Q40BW
Publication Release Date: January 27, 2011
- 47 -
Preliminary - Revision A
8.2.30
Release Power-down / Device ID (ABh)
The Release from Power-down / Device ID instruction is a multi-purpose instruction. It can be used to
release the device from the power-down state, or obtain the devices electronic identification (ID) number.
To release the device from the power-down state, the instruction is issued by driving the /CS pin low,
shifting the instruction code “ABh” and driving /CS high as shown in figure 28a. Release from power-
down will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal
operation and other instructions are accepted. The /CS pin must remain high during the tRES1 time
duration.
When used only to obtain the Device ID while not in the power-down state, the instruction is initiated by
driving the /CS pin low and shifting the instruction code “ABh” followed by 3-dummy bytes. The Device ID
bits are then shifted out on the falling edge of CLK with most significant bit (MSB) first as shown in figure
28a. The Device ID values for the W25Q40BW is listed in Manufacturer and Device Identification table.
The Device ID can be read continuously. The instruction is completed by driving /CS high.
When used to release the device from the power-down state and obtain the Device ID, the instruction is
the same as previously described, and shown in figure 28b, except that after /CS is driven high it must
remain high for a time duration of tRES2 (See AC Characteristics). After this time duration the device will
resume normal operation and other instructions will be accepted. If the Release from Power-down /
Device ID instruction is issued while an Erase, Program or Write cycle is in process (when BUSY equals
1) the instruction is ignored and will not have any effects on the current cycle.
Figure 28a. Release Power-down Instruction Sequence
相关PDF资料 |
PDF描述 |
|---|---|
| WS512K32-25HI | 2M X 8 MULTI DEVICE SRAM MODULE, 25 ns, CHIP66 |
| WS512K32N-70HI | 2M X 8 MULTI DEVICE SRAM MODULE, 70 ns, CHIP66 |
| WF128K32-60G4I5 | 512K X 8 FLASH 5V PROM MODULE, 60 ns, CQFP68 |
| WMS128K8-17FME | 128K X 8 STANDARD SRAM, 17 ns, CDFP36 |
| WMS128K8-20FME | 128K X 8 STANDARD SRAM, 20 ns, CDFP36 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W25Q40BWSNIG TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 4MBIT 80MHZ 8SOIC |
| W25Q40BWSNIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q40BWSSIG | 功能描述:IC FLASH SPI 4MBIT 8SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽） 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8 |
| W25Q40BWSSIG TR | 制造商:Winbond Electronics Corp 功能描述:IC FLASH 4MBIT 80MHZ 8SOIC |
| W25Q40BWUXIG | 制造商:WINBOND 制造商全称:Winbond 功能描述:1.8V 4M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
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