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| 型号： | W25Q64BVSFIG |
| 厂商： | Winbond Electronics |
| 文件页数： | 39/61页 |
| 文件大小： | 0K |
| 描述： | IC SPI FLASH 64MBIT 16SOIC |
| 标准包装： | 44 |
| 系列： | SpiFlash® |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 64M（8M x 8） |
| 速度： | 80MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 管件 |
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W25Q64BV
11.2.21 Erase Suspend (75h)
The Erase Suspend instruction “75h”, allows the system to interrupt a Sector or Block Erase operation
and then read from or program data to, any other sectors or blocks. The Erase Suspend instruction
sequence is shown in figure 21.
The Write Status Register instruction (01h) and Erase instructions (20h, 52h, D8h, C7h, 60h) are not
allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block erase operation. If
written during the Chip Erase or Program operation, the Erase Suspend instruction is ignored.
The Erase Suspend instruction “75h” will be accepted by the device only if the SUS bit in the Status
Register equals to 0 and the BUSY bit equals to 1 while a Sector or Block Erase is on-going. If the SUS
bit equals to 1 or the BUSY bit equals to 0, the Suspend instruction will be ignored by the device. A
maximum of time of “t SUS ” (See AC Characteristics) is required to suspend the erase operation. The
BUSY bit in the Status Register will be cleared from 1 to 0 within “t SUS ” and the SUS bit in the Status
Register will be set from 0 to 1 immediately after Erase Suspend. For a previously resumed Erase
operation, it is also required that the Suspend instruction “75h” is not issued earlier than a minimum of
time of “t SUS ” following the preceding Resume instruction “7Ah”.
Unexpected power off during the Erase suspend state will reset the device and release the suspend
state. SUS bit in the Status Register will also reset to 0. The data within the sector or block that was being
suspended may become corrupted. It is recommended for the user to implement system design
techniques against the accidental power interruption and preserve data integrity during erase suspend
state.
Figure 21. Erase Suspend Instruction Sequence
Publication Release Date: July 08, 2010
- 39 -
Revision E
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W25Q64BVSFIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q64BVSSIG | 功能描述:SPI FLASH 64MBIT 8-SOIC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| W25Q64BVSSIGTR | 制造商:Winbond Electronics Corp 功能描述:SPIFLASH, 64M-BIT, 4KB UNIFORM |
| W25Q64BVSSIP | 制造商:WINBOND 制造商全称:Winbond 功能描述:64M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI |
| W25Q64BVZEIG | 功能描述:IC SPI FLASH 64MBIT 8WSON RoHS:是 类别:集成电路 (IC) >> 存储器 系列:SpiFlash® 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
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