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参数资料
| 型号： | W28V400 |
| 英文描述： | FLASH |
| 中文描述： | 闪光 |
| 文件页数： | 3/48页 |
| 文件大小： | 427K |
| 代理商： | W28V400 |
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W28V400B/T
Publication Release Date: November 18, 2002
- 3 -
Revision A3
1. GENERAL DESCRIPTION
The W28V400B/T Flash memory with SmartVoltage technology is a high-density, cost-effective,
nonvolatile, read/write storage solution for a wide range of applications. It operates off of V
DD
= 2.7V
and V
PP
= 2.7V. This low voltage operation capability realize battery life and suits for cellular phone
application. Its Boot, Parameter and Main-blocked architecture, as well as low voltage and extended
cycling. These features provide a highly flexible device suitable for portable terminals and personal
computers. Additionally, the enhanced suspend capabilities provide an ideal solution for both code
and data storage applications. For secure code storage applications, such as networking where code
is either directly executed out of flash or downloaded to DRAM, the device offers four levels of
protection. These are: absolute protection, enabled when V
PP
≤
V
PPLK
; selective hardware blocking;
flexible software blocking; or write protection. These alternatives give designers comprehensive
control over their code security needs. The device is manufactured on 0.35
μ
m process technology. It
comes in industry-standard package: the 48-lead TSOP, ideal for board constrained applications.
2. FEATURES
SmartVoltage Technology
V
DD
= 2.7V, 3.3V or 5V
V
PP
= 2.7V, 3.3V, 5V or 12V
User-Configurable x 8 or x 16 Operation
High-Performance Access Time
85 nS (5V
±
0.25V), 90 nS (5V
±
0.5V),
100 nS (3.3V
±
0.3V), 120 nS (2.7V to 3.6V)
Operating Temperature
0
°
C to +70
°
C
Optimized Array Blocking Architecture
Two 4k-word (8k-byte) Boot Blocks
Six 4k-word (8k-byte) Parameter Blocks
Seven 32k-word (64k-byte) Main Blocks
Top Boot Location (W28V400TT)
Bottom Boot Location (W28V400BT)
Extended Cycling Capability
Minimum 100,000 Block Erase Cycles
Low Power Management
Deep Power-down Mode
Automatic Power Savings Mode Decreases
I
CCR
in Static Mode
Enhanced Automated Suspend Options
Word/Byte Write Suspend to Read
Block Erase Suspend to Word/Byte Write
Block Erase Suspend to Read
Enhanced Data Protection Features
Absolute Protection with V
PP
≤
V
PPLK
Block Erase, Full Chip Erase, Word/Byte
Write and Lock-Bit Configuration Lockout
during Power Transitions
Block Blocks Protection with #WP = V
IL
Automated Word/Byte Write and Block Erase
Command User Interface (CUI)
Status Register (SR)
SRAM-Compatible Write Interface
Industry-Standard Packaging
48-Lead TSOP
相关PDF资料 |
PDF描述 |
|---|---|
| W29C020C12BN | EEPROM|FLASH|256KX8|CMOS|DIP|32PIN|PLASTIC |
| W29C020C90BN | x8 Flash EEPROM |
| W29C040-12 | EEPROM|FLASH|512KX8|CMOS|DIP|32PIN|PLASTIC |
| W29C040-12N | x8 Flash EEPROM |
| W29C040-90 | EEPROM|FLASH|512KX8|CMOS|DIP|32PIN|PLASTIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W28V400B | 制造商:WINBOND 制造商全称:Winbond 功能描述:4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY |
| W28V400BT85C | 制造商:WINBOND 制造商全称:Winbond 功能描述:4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY |
| W28V400T | 制造商:WINBOND 制造商全称:Winbond 功能描述:4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY |
| W28V400TT85C | 制造商:WINBOND 制造商全称:Winbond 功能描述:4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY |
| W28WH | 制造商:ETERNA 功能描述:TRACKLIGHT, FLEXIBLE TRACK COUPLER |
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