参数资料
型号: W332M64V-125SBI
厂商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分类: DRAM
英文描述: 32M X 64 SYNCHRONOUS DRAM, 6 ns, PBGA208
封装: 13 X 22 MM, PLASTIC, BGA-208
文件页数: 2/15页
文件大小: 355K
代理商: W332M64V-125SBI
10
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W332M64V-XSBX
August 2007
Rev. 4
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (NOTES 1, 6)
VCC, VCCQ = +3.3V ± 0.3V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
Min
Max
Units
Supply Voltage
VCC,VCCQ
3
3.6
V
Input High Voltage: Logic 1; All inputs (21)
VIH
2
VCC + 0.3
V
Input Low Voltage: Logic 0; All inputs (21)
VIL
-0.3
0.8
V
Input Leakage Current: Any input 0V ≤ VIN ≤ VCC (All other pins not under test = 0V)
II
-5
5
μA
Input Leakage Address Current (All other pins not under test = 0V)
II
-20
20
μA
Output Leakage Current: I/Os are disabled; 0V VOUT VCCQ
IOZ
-5
5
μA
Output Levels:
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = 4mA)
VOH
2.4
V
VOL
0.4
V
ICC SPECIFICATIONS AND CONDITIONS (NOTES 1,6,11,13)
VCC, VCCQ = +3.3V ± 0.3V; -55°C ≤ TA ≤ +125°C
Parameter/Condition
Symbol
Max
Units
Operating Current: Active Mode;
Burst = 2; Read or Write; tRC = tRC (min); CAS latency = 3 (3, 18, 19)
ICC1
440
mA
Standby Current: Active Mode; CKE = HIGH; CS# = HIGH;
All banks active after tRCD met; No accesses in progress (3, 12, 19)
ICC3
180
mA
Operating Current: Burst Mode; Continuous burst;
Read or Write; All banks active; CAS latency = 3 (3, 18, 19)
ICC4
460
mA
Self Refresh Current: CKE 0.2V (Commercial and Industrial Temperature: 0°C to + 70°C) (27)
ICC7
24
mA
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