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参数资料
| 型号： | W332M72V-133BM |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 32M X 72 SYNCHRONOUS DRAM, 5.5 ns, PBGA219 |
| 封装： | 32 X 25 MM, PLASTIC, BGA-219 |
| 文件页数： | 10/15页 |
| 文件大小： | 257K |
| 代理商： | W332M72V-133BM |
4
White Electronic Designs
W332M72V-XBX
March 2006
Rev. 3
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
state, it should be loaded prior to applying any operational
command.
REGISTER DEFINITION
MODE REGISTER
The Mode Register is used to dene the specic mode
of operation of the SDRAM. This denition includes the
selec-tion of a burst length, a burst type, a CAS latency,
an operating mode and a write burst mode, as shown in
Figure 3. The Mode Register is programmed via the LOAD
MODE REGISTER command and will retain the stored
information until it is programmed again or the device
loses power.
Mode register bits M0-M2 specify the burst length, M3
species the type of burst (sequential or interleaved),
M4-M6 specify the CAS latency, M7 and M8 specify the
operating mode, M9 species the WRITE burst mode,
and M10 and M11 are reserved for future use. Address
A12 (M12) is undened but should be driven LOW during
loading of the mode register.
The Mode Register must be loaded when all banks are
idle, and the controller must wait the specied time before
initiating the subsequent operation. Violating either of these
requirements will result in unspecied operation.
BURST LENGTH
Read and write accesses to the SDRAM are burst oriented,
with the burst length being programmable, as shown
in Figure 3. The burst length determines the maximum
number of column locations that can be accessed for a
given READ or WRITE command. Burst lengths of 1, 2, 4
or 8 locations are available for both the sequential and the
interleaved burst types, and a full-page burst is available
for the sequential type. The full-page burst is used in
conjunction with the BURST TERMINATE command to
generate arbitrary burst lengths.
Reserved states should not be used, as unknown operation
or incompatibility with future versions may result.
When a READ or WRITE command is issued, a block of
columns equal to the burst length is effectively selected.
All accesses for that burst take place within this block,
meaning that the burst will wrap within the block if a
boundary is reached. The block is uniquely selected by
A1-9 when the burst length is set to two; by A2-9 when
the burst length is set to four; and by A3-9 when the burst
length is set to eight. The remaining (least signicant)
All inputs and outputs are LVTTL compatible. SDRAMs offer
substantial advances in DRAM operating performance,
including the ability to synchronously burst data at a high
data rate with automatic column-address generation,
the ability to interleave between internal banks in order
to hide precharge time and the capability to randomly
change column addresses on each clock cycle during a
burst access.
FUNCTIONAL DESCRIPTION
Read and write accesses to the SDRAM are burst oriented;
accesses start at a selected location and continue for
a programmed number of locations in a programmed
sequence. Accesses begin with the registration of an
ACTIVE command which is then followed by a READ or
WRITE command. The address bits registered coincident
with the ACTIVE command are used to select the bank
and row to be accessed (BA0 and BA1 select the bank,
A0-12 select the row). The address bits (A0-9) registered
coincident with the READ or WRITE command are used to
select the starting column location for the burst access.
Prior to normal operation, the SDRAM must be initialized.
The following sections provide detailed information
covering device initialization, register denition, command
descriptions and device operation.
INITIALIZATION
SDRAMs must be powered up and initialized in a predened
manner. Operational procedures other than those specied
may result in undened operation. Once power is applied
to VCC and VCCQ (simultaneously) and the clock is stable
(stable clock is dened as a signal cycling within timing
constraints specified for the clock pin), the SDRAM
requires a 100s delay prior to issuing any command
other than a COMMAND INHIBIT or a NOP. Starting at
some point during this 100s period and continuing at
least through the end of this period, COMMAND INHIBIT
or NOP commands should be applied.
Once the 100s delay has been satised with at least
one COMMAND INHIBIT or NOP command having been
applied, a PRECHARGE command should be applied. All
banks must be precharged, thereby placing the device in
the all banks idle state.
Once in the idle state, two AUTO REFRESH cycles must be
performed. After the AUTO REFRESH cycles are complete,
the SDRAM is ready for Mode Register programming.
Because the Mode Register will power up in an unknown
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| W332M72V-100BI | 32M X 72 SYNCHRONOUS DRAM, 7 ns, PBGA219 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W332M72V-133SBC | 制造商:Microsemi Corporation 功能描述:32M X 72 SDRAM, 3.3V, 133MHZ, 208 PBGA, COMMERCIAL TEMP. - Bulk |
| W332M72V-133SBI | 制造商:Microsemi Corporation 功能描述:32M X 72 SDRAM, 3.3V, 133MHZ, 208 PBGA, INDUSTRIAL TEMP. - Bulk |
| W332M72V-133SBM | 制造商:Microsemi Corporation 功能描述:32M X 72 SDRAM, 3.3V, 133MHZ, 208 PBGA, MIL-TEMP. - Bulk |
| W332M72V-XBX | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 Synchronous DRAM |
| W332M72V-XSBX | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx72 Synchronous DRAM |
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