- 您现在的位置：买卖IC网 > PDF目录221598 > W3E16M72S-250BC (WHITE ELECTRONIC DESIGNS CORP) 16M X 72 DDR DRAM, 0.8 ns, PBGA219 PDF资料下载
参数资料
| 型号： | W3E16M72S-250BC |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 72 DDR DRAM, 0.8 ns, PBGA219 |
| 封装： | 32 X 25 MM, PLASTIC, BGA-219 |
| 文件页数： | 14/17页 |
| 文件大小： | 766K |
| 代理商： | W3E16M72S-250BC |
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3E16M72S-XBX
February 2005
Rev. 7
EXTENDED MODE REGISTER
The extended mode register controls functions beyond
those controlled by the mode register; these additional
functions are DLL enable/disable, output drive strength, and
QFC#. These functions are controlled via the bits shown
in Figure 5. The extended mode register is programmed
via the LOAD MODE REGISTER command to the mode
register (with BA0 = 1 and BA1 = 0) and will retain the stored
information until it is programmed again or the device loses
power. The enabling of the DLL should always be followed
by a LOAD MODE REGISTER command to the mode
register (BA0/BA1 both LOW) to reset the DLL.
The extended mode register must be loaded when all banks
are idle and no bursts are in progress, and the controller
must wait the specied time before initiating any subsequent
operation. Violating either of these requirements could
result in unspecied operation.
TABLE 1 – BURST DEFINITION
NOTES:
1. For a burst length of two, A1-Ai select two-data-element block; A0 selects the starting
column within the block.
2. For a burst length of four, A2-Ai select four-data-element block; A0-1 select the
starting column within the block.
3. For a burst length of eight, A3-Ai select eight-data-element block; A0-2 select the
starting column within the block.
4. Whenever a boundary of the block is reached within a given sequence above, the
following access wraps within the block.
FIGURE 3 – MODE REGISTER DEFINITION
M3 = 0
2
4
8
Reserved
M3 = 1
2
4
8
Reserved
Operating Mode
Normal Operation
Normal Operation/Reset DLL
All other states reserved
00
Valid
0
1
Burst Type
Sequential
Interleaved
CAS Latency
Reserved
2
Reserved
2.5
Reserved
Burst Length
M0
0
1
0
1
0
1
0
1
Burst Length
CAS Latency
BT
A9
A7
A6
A5
A4
A3
A8
A2
A1
A0
Mode Register (Mx)
Address Bus
M1
0
1
0
1
M2
0
1
M3
M4
0
1
0
1
0
1
0
1
M5
0
1
0
1
M6
0
1
M6-M0
M8
M7
Operating Mode
A10
A11
* M14 and M13
(BA0 and BA1 must be
"0, 0" to select
the base mode register
(vs. the extended
mode register).
0*
BA0
BA1
Reserved
M9
M10
M11
0
10
0
--
-
A12
M12
0
-
Burst
Length
Starting Column
Address
Order of Accesses Within a Burst
Type = Sequential
Type = Interleaved
2
A0
0
0-1
1
1-0
4
A1
A0
0
0-1-2-3
0
1
1-2-3-0
1-0-3-2
1
0
2-3-0-1
1
3-0-1-2
3-2-1-0
8
A2
A1
A0
0
0-1-2-3-4-5-6-7
0
1
1-2-3-4-5-6-7-0
1-0-3-2-5-4-7-6
0
1
0
2-3-4-5-6-7-0-1
2-3-0-1-6-7-4-5
0
1
3-4-5-6-7-0-1-2
3-2-1-0-7-6-5-4
1
0
4-5-6-7-0-1-2-3
1
0
1
5-6-7-0-1-2-3-4
5-4-7-6-1-0-3-2
1
0
6-7-0-1-2-3-4-5
6-7-4-5-2-3-0-1
1
7-0-1-2-3-4-5-6
7-6-5-4-3-2-1-0
相关PDF资料 |
PDF描述 |
|---|---|
| WV3HG64M72EER665D7MG | 64M X 72 DDR DRAM MODULE, DMA244 |
| WPS256K16B-17LJCGA | 256K X 16 STANDARD SRAM, 17 ns, PDSO44 |
| WS57C010F-25E | 128K X 8 OTPROM, 25 ns, PDSO32 |
| WS57C010F-45CI | 128K X 8 UVPROM, 45 ns, CQCC32 |
| WF512K64-90G4WI5A | 4M X 8 FLASH 5V PROM MODULE, 90 ns, CQMA116 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E16M72S-250BI | 制造商:Microsemi Corporation 功能描述:16M X 72 DDR, 2.5V, 250 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E16M72S-250BM | 制造商:Microsemi Corporation 功能描述:16M X 72 DDR, 2.5V, 250 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E16M72S-266BC | 制造商:Microsemi Corporation 功能描述:16M X 72 DDR, 2.5V, 266 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E16M72S-266BI | 制造商:Microsemi Corporation 功能描述:16M X 72 DDR, 2.5V, 266 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E16M72S-266BM | 制造商:Microsemi Corporation 功能描述:16M X 72 DDR, 2.5V, 266 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
发布紧急采购，3分钟左右您将得到回复。