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参数资料
| 型号： | W3E32M64S-400SBC |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM, 0.7 ns, PBGA208 |
| 封装： | 13 X 22 MM, PLASTIC, BGA-208 |
| 文件页数： | 7/17页 |
| 文件大小： | 615K |
| 代理商： | W3E32M64S-400SBC |
15
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
W3E32M64S-XSBX
November 2005
Rev. 3
That is, from the time the AUTO REFRESH command is registered, CKE must be
active at each rising clock edge, until tRFC has been satised.
50. ICC2N species the DQ, DQS, and DM to be driven to a valid high or low logic
level. ICC2Q is similar to ICC2F except ICC2Q species the address and control
inputs to remain stable. Although ICC2F, ICC2N, and ICC2Q are similar, ICC2F is
“worst case.”
51. Whenever the operating frequency is altered, not including jitter, the DLL is required
to be reset. This is followed by 200 clock cycles before any READ command.
52. This is the DC voltage supplied at the DRAM and is inclusive of all noise up to 20
MHz. Any noise above 20 MHz at the DRAM generated from any source other than
that of the DRAM itself may not exceed the DC coltage range of 2.6V ± 100mV.
53. For 333Mbs operation of commercial and Industrial temperature CL = 2.5, at
Military temperature CL = 3.
54. For 400Mbs operation at commercial and industrial temperature CL = 3 Only.
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
Bottom View
PACKAGE DIMENSION: 208 PLASTIC BALL GRID ARRAY (PBGA)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
W
11 10 9
8
7
6
5
4
3
2
1
208 x 0.6 (0.024) NOM
1.0 (0.039)NOM
10.0 (0.394) NOM
13.10 (0.516) MAX
22.10
(0.870)
MAX
18.0
(0.709)
NOM
1.0
(0.039)
NOM
2.56 (0.101) MAX
0.5 (0.020) NOM
相关PDF资料 |
PDF描述 |
|---|---|
| W3E32M64SA-200BC | 32M X 64 DDR DRAM, 0.8 ns, PBGA219 |
| W3E32M64SA-333BC | 32M X 64 DDR DRAM, 0.7 ns, PBGA219 |
| W3E32M64SA-333BM | 32M X 64 DDR DRAM, 0.7 ns, PBGA219 |
| W3E32M64SA-333BI | 32M X 64 DDR DRAM, 0.7 ns, PBGA219 |
| W3E32M72S-200SBM | 32M X 72 DDR DRAM, 0.8 ns, PBGA208 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E32M64SA-200BC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M64SA-200BI | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E32M64SA-200BM | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 200 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E32M64SA-250BC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M64SA-250BI | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 250 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
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