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参数资料
| 型号： | W3E32M64SA-266BI |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM, 0.75 ns, PBGA219 |
| 封装： | 25 X 25 MM, PLASTIC, BGA-219 |
| 文件页数： | 3/17页 |
| 文件大小： | 701K |
| 代理商： | W3E32M64SA-266BI |
W3E32M64SA-XBX
11
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
December 2007
Rev. 1
DC Electrical Characteristics And Operating Conditions (Notes 1, 6)
VCC = +2.5V ± 0.2V; -55°C TA +125°C
Parameter/Condition
Symbol
Min
Max
Units
Supply Voltage
VCC
2.3
2.7
V
I/O Supply Voltage
VCCQ
2.3
2.7
V
Input Leakage Current: Any input 0V ≤ VIN ≤ VCC (All other pins not under test = 0V)
II
-2
2
μA
Input Leakage Address Current (All other pins not under test = 0V)
II
-8
8
μA
Output Leakage Current: I/Os are disabled; 0V ≤ VOUT ≤ VCC
IOZ
-5
5
μA
Output Levels: Full drive option
High Current (VOUT = VCCQ - 0.373V, minimum VREF, minimum VTT)
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT)
IOH
-16.8
–
mA
IOL
16.8
–
mA
Output Levels: Reduced drive option
High Current (VOUT = VCCQ - 0.763V, minimum VREF, minimum VTT)
Low Current (VOUT = 0.763V, maximum VREF, maximum VTT)
IOHR
-9
–
mA
IOLR
9–
mA
I/O Reference Voltage
VREF
0.49 x VCCQ
0.51 x VCCQ
V
I/O Termination Voltage
VTT
VREF - 0.04
VREF + 0.04
V
ICC SPECIFICATIONS AND CONDITIONS (NOTES 1-5, 10, 12, 14)
VCC, = +2.5V ± 0.2V; -55°C TA +125°C
Parameter/Condition
Symbol
MAX
333Mbs
250Mbs
266Mbs 200Mbs
Units
OPERATING CURRENT: One bank; Active-Precharge; tRC = tRC (MIN); tCK = tCK (MIN); DQ, DM, and DQS inputs
changing once per clock cycle; Address and control inputs changing once every two clock cycles; (22, 48)
ICC0
520
460
mA
OPERATING CURRENT: One bank; Active-Read-Precharge; Burst = 2; tRC = tRC (MIN); tCK = tCK (MIN); IOUT = 0mA;
Address and control inputs changing once per clock cycle (22, 48)
ICC1
640
580
mA
PRECHARGE POWER-DOWN STANDBY CURRENT: All banks idle; Power-down mode; tCK = tCK (MIN); CKE =
LOW; (23, 32, 50)
ICC2P
20
mA
IDLE STANDBY CURRENT: CS# = HIGH; All banks idle; tCK = tCK (MIN); CKE = HIGH; Address and other control
inputs changing once per clock cycle. VIN = VREF for DQ, DQS, and DM (51)
ICC2F
180
160
mA
ACTIVE POWER-DOWN STANDBY CURRENT: One bank active; Power-down mode; tCK = tCK (MIN); CKE = LOW
(23, 32, 50)
ICC3P
140
120
mA
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One bank; Active-Precharge; tRC = tRAS (MAX); tCK = tCK
(MIN); DQ, DM, and DQS inputs changing twice per clock cycle; Address and other control inputs changing once per
clock cycle (22)
ICC3N
200
180
mA
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One bank active; Address and control inputs changing
once per clock cycle; tCK = tCK (MIN); IOUT = 0mA (22, 48)
ICC4R
660
580
mA
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One bank active; Address and control inputs changing
once per clock cycle; tCK = tCK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle (22)
ICC4W
975
800
540
mA
AUTO REFRESH CURRENT
tREF = tRC (MIN) (27, 50)
ICC5
1,160
1,120
mA
tREF = 7.8125μs (27, 50)
ICC5A
40
mA
SELF REFRESH CURRENT: CKE ≤ 0.2V
Standard (11)
ICC6
20
mA
OPERATING CURRENT: Four bank interleaving READs (BL=4) with auto precharge, tRC =tRC (MIN); tCK = tCK (MIN);
Address and control inputs change only during Active READ or WRITE commands. (22, 49)
ICC7
2,025
1,620
1,400
mA
AC INPUT OPERATING CONDITIONS
VCC, VCCQ = +2.5V ± 0.2V; -55°C TA +125°C
Parameter/Condition
Symbol
Min
Max
Units
Input High (Logic 1) Voltage
VIH
VREF + 0.5
-
V
Input Low (Logic 0) Voltage
VIL
-VREF - 0.5
V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E32M64SA-266BM | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E32M64SA-333BC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 333 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M64SA-333BI | 制造商:White Electronic Designs 功能描述:FOUR-PORT, MIXED SIGNAL, HIGH-VOLTAGE HIGH POWER OVER ET 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 333 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3E32M64SA-333BM | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 333 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E32M64S-XBX | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx64 DDR SDRAM |
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