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参数资料
| 型号： | W3E32M64SA-266BI |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 32M X 64 DDR DRAM, 0.75 ns, PBGA219 |
| 封装： | 25 X 25 MM, PLASTIC, BGA-219 |
| 文件页数： | 7/17页 |
| 文件大小： | 701K |
| 代理商： | W3E32M64SA-266BI |
W3E32M64SA-XBX
15
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
December 2007
Rev. 1
50. ICC2N species the DQ, DQS, and DM to be driven to a valid high or low logic level.
ICC2Q is similar to ICC2F except ICC2Q species the address and control inputs to
remain stable. Although ICC2F, ICC2N, and ICC2Q are similar, ICC2F is “worst case.”
51. Whenever the operating frequency is altered, not including jitter, the DLL is required
to be reset. This is followed by 200 clock cycles before any READ command.
52. This is the DC voltage supplied at the DRAM and is inclusive of all noise up to 20
MHz. Any noise above 20 MHz at the DRAM generated from any source other than
that of the DRAM itself may not exceed the DC voltage range of 2.6V ± 100mV.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E32M64SA-266BM | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 266 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E32M64SA-333BC | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 333 MHZ, 219 PBGA, COMMERCIAL TEMP. - Bulk |
| W3E32M64SA-333BI | 制造商:White Electronic Designs 功能描述:FOUR-PORT, MIXED SIGNAL, HIGH-VOLTAGE HIGH POWER OVER ET 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 333 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3E32M64SA-333BM | 制造商:Microsemi Corporation 功能描述:32M X 64 DDR, 2.5V, 333 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E32M64S-XBX | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:32Mx64 DDR SDRAM |
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