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参数资料
| 型号： | W3E64M72S-200SBC |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | DRAM |
| 英文描述： | 64M X 72 DDR DRAM, 0.8 ns, PBGA219 |
| 封装： | 25 X 32 MM, PLASTIC, BGA-219 |
| 文件页数： | 4/19页 |
| 文件大小： | 496K |
| 代理商： | W3E64M72S-200SBC |
W3E64M72S-XSBX
12
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
September 2007
Rev. 3
White Electronic Designs Corp. reserves the right to change products or specications without notice.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(NOTES 1-5, 16)
VCC, VCCQ = +2.5V ± 0.2V; -55°C ≤ TA ≥ +125°C
Parameter/Condition
Symbol
Min
Max
Units
Supply Voltage (36, 41)
VCC
2.3
2.7
V
I/O Supply Voltage (36, 41, 44)
VCCQ
2.3
2.7
V
Input Leakage Current: Any input 0V ≤ VIN ≤ VCC (All other pins not under test = 0V)
II
-2
2
μA
Input Leakage Address Current (All other pins not under test = 0V)
II
-18
18
μA
Output Leakage Current: I/Os are disabled; 0V ≤ VOUT ≤ VCCQ
IOZ
-5
5
μA
Output Levels: Full drive option (37, 39)
High Current (VOUT = VCCQ - 0.373V, minimum VREF, minimum VTT)
Low Current (VOUT = 0.373V, maximum VREF, maximum VTT)
IOH
-12
-
mA
IOL
12
-
mA
I/O Reference Voltage (6,44)
VREF
0.49 x VCCQ
0.51 x VCCQ
V
I/O Termination Voltage (7, 44)
VTT
VREF - 0.04
VREF + 0.04
V
AC INPUT OPERATING CONDITIONS
VCC, VCCQ = +2.5V ± 0.2V; -55°C TA +125°C
Parameter/Condition
Symbol
Min
Max
Units
Input High (Logic 1) Voltage
VIH
VREF +0.310
—
V
Input Low (Logic 0) Voltage
VIL
—VREF -0.310
V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| W3E64M72S-200SBI | 制造商:Microsemi Corporation 功能描述:64M X 72 DDR, 2.5V, 200 MHZ, 219 PBGA, INDUSTRIAL TEMP. - Bulk |
| W3E64M72S-200SBM | 制造商:Microsemi Corporation 功能描述:64M X 72 DDR, 2.5V, 200 MHZ, 219 PBGA, MIL-TEMP. - Bulk |
| W3E64M72S-250BC | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:64Mx72 DDR SDRAM |
| W3E64M72S-250BI | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:64Mx72 DDR SDRAM |
| W3E64M72S-250BM | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:64Mx72 DDR SDRAM |
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