参数资料
型号: W3EG72128S265AD4-SG
厂商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分类: DRAM
英文描述: 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA200
封装: ROHS COMPLIANT, SO-DIMM-200
文件页数: 12/14页
文件大小: 197K
代理商: W3EG72128S265AD4-SG
7
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
W3EG72128S-AD4
-BD4
August 2005
Rev. 3
PRELIMINARY
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED
AC OPERATING CONDITIONS
AC CHARACTERISTICS
335
262
265/202
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
NOTES
Access window of DQs from CK/CK#
tAC
-0.70
+0.70
-0.75
+0.75
-0.75
0.75
ns
CK high-level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
26
CK low-level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
26
Clock cycle time
CL = 2.5
tCK (2.5)
6
13
7.5
13
7.5
13
ns
39, 44
CL = 2
tCK (2)
7.5
13
7.5
13
7.5/10
13
ns
39, 44
DQ and DM input hold time relative to DQS
tDH
0.45
0.5
ns
23, 27
DQ and DM input setup time relative to DQS
tDS
0.45
0.5
ns
23, 27
DQ and DM input pulse width (for each input)
tDIPW
1.75
ns
27
Access window of DQS from CK/CK#
tDQSCK
-0.60
+0.60
-0.75
+0.75
-0.75
+0.75
ns
DQS input high pulse width
tDQSH
0.35
tCK
DQS input low pulse width
tDQSL
0.35
tCK
DQS-DQ skew, DQS to last DQ valid, per group, per
access
tDQSQ
0.4
0.5
ns
22, 23
Write command to rst DQS latching transition
tDQSS
0.75
1.25
0.75
1.25
0.75
1.25
tCK
DQS falling edge to CK rising - setup time
tDSS
0.20
0.2
tCK
DQS falling edge from CK rising - hold time
tDSH
0.20
0.2
tCK
Half clock period
tHP
tCH,tCL
tCH, tCL
ns
30
Data-out high-impedance window from CK/CK#
tHZ
+0.70
+0.75
ns
16, 36
Data-out low-impedance window from CK/CK#
tLZ
-0.70
-0.75
ns
16, 36
Address and control input hold time (fast slew rate)
tIHF
0.75
0.90
ns
12
Address and control input setup time (fast slew rate)
tISF
0.75
0.90
ns
12
Address and control input hold time (slow slew rate)
tIHS
0.8
1
ns
12
相关PDF资料
PDF描述
W3EG7232S262AD4IS 32M X 72 DDR DRAM MODULE, 0.75 ns, DMA200
W3EG7232S335BD4ISG 32M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
W3H128M64E2-400SBC DDR DRAM, PBGA208
W3HG264M72EER806AD7MG 128M X 72 DDR DRAM MODULE, DMA244
W7NCF01GH21ISBCG 64M X 16 FLASH 3.3V PROM CARD, 150 ns, UUC
相关代理商/技术参数
参数描述
W3EG72128S265AD4-XG 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
W3EG72128S265BD4-XG 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
W3EG72128S265D3 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM UNBUFFERED
W3EG72128S265JD3 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM UNBUFFERED
W3EG72128S335AD4-XG 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:1GB - 2x64Mx72 DDR SDRAM UNBUFFERED ECC w/PLL