参数资料
型号: W3EG72128S265AD4-SG
厂商: MICROSEMI CORP-PMG MICROELECTRONICS
元件分类: DRAM
英文描述: 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA200
封装: ROHS COMPLIANT, SO-DIMM-200
文件页数: 13/14页
文件大小: 197K
代理商: W3EG72128S265AD4-SG
8
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
W3EG72128S-AD4
-BD4
August 2005
Rev. 3
PRELIMINARY
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED
AC OPERATING CONDITIONS (Continued)
AC CHARACTERISTICS
335
262
265/202
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
NOTES
Address and control input setup time (slow slew rate)
tISS
0.8
1
ns
12
Address and Control input pulse width (for each input)
tIPW
2.2
ns
LOAD MODE REGISTER command cycle time
tMRD
12
15
ns
DQ-DQS hold, DQS to rst DQ to go non-valid, per access
tQH
tHP - tQHS
ns
22, 23
Data hold skew factor
tQHS
0.50
0.75
ns
ACTIVE to PRECHARGE command
tRAS
42
70,000
40
120,000
40
120,000
ns
30, 47
ACTIVE to READ with Auto precharge command
tRAP
15
20
ns
ACTIVE to ACTIVE/AUTO REFRESH command period
tRC
60
65
ns
AUTO REFRESH command period
tRFC
72
75
78
ns
42
ACTIVE to READ or WRITE delay
tRCD
15
20
ns
PRECHARGE command period
tRP
15
20
ns
DQS read preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
37
DQS read postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
37
ACTIVE bank a to ACTIVE bank b command
tRRD
12
15
ns
DQS write preamble
tWPRE
0.25
tCK
DQS write preamble setup time
tWPRES
0
ns
18, 19
DQS write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
17
Write recovery time
tWR
15
ns
Internal WRITE to READ command delay
tWTR
111
tCK
Data valid output window
NA
tQH -tDQSQ
tQH - tDQSQ
ns
22
REFRESH to REFRESH command interval
tREFC
70.3
s
21
Average periodic refresh interval
tREFI
7.8
s
21
Terminating voltage delay to VCC
tVTD
000
ns
Exit SELF REFRESH to non-READ command
tXSNR
75
ns
Exit SELF REFRESH to READ command
tXSRD
200
tCK
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