- 您现在的位置：买卖IC网 > PDF目录68457 > W3H64M16E-400BC (MICROSEMI CORP-PMG MICROELECTRONICS) 64M X 16 DDR DRAM, 0.6 ns, PBGA79 PDF资料下载
参数资料
| 型号： | W3H64M16E-400BC |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 64M X 16 DDR DRAM, 0.6 ns, PBGA79 |
| 封装： | 14 X 11 MM, 1.27 MM PITCH, PLASTIC, BGA-79 |
| 文件页数： | 14/30页 |
| 文件大小： | 881K |
| 代理商： | W3H64M16E-400BC |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页当前第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页
W3H64M16E-XBX
21
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
July 2009
Rev. 5
White Electronic Designs Corp. reserves the right to change products or specications without notice.
TABLE 5 – DC OPERATING CONDITIONS
All voltages referenced to VSS
Parameter
Symbol
Min
Typical
Max
Unit
Notes
Supply voltage
VCC
1 .7
1 .8
1 .9
V
1
I/O Supply voltage
VCCQ
1 .7
1 .8
1 .9
V
4
I/O Reference voltage
VREF
0.49 x VCCQ
0.50 x VCCQ
0.51 x VCCQ
V2
I/O Termination voltage
VTT
VREF-0.04
VREF
VREF + 0.04
V
3
Notes:
1.
VCC and VCCQ are tied on the device.
2.
VREF is expected to equal VCCQ/2 of the transmitting device and to track variations in the DC level of the same. Peak-to-peak noise on VREF may not exceed ±1 percent of the DC
value. Peak-to-peak AC noise on VREF may not exceed ±2 percent of VREF. This measurement is to be taken at the nearest VREF bypass capacitor.
3.
VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF.
TABLE 6 – ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
MIN
MAX
Unit
VCC/ VCCQ
Voltage on VCC pin relative to VSS
-0.5
2.3
V
VIN, VOUT
Voltage on any pin relative to VSS
-0.5
2.3
V
TSTG
Storage temperature
-55
125
°C
TCASE
Device operating temperature
-55
125
°C
IL
Input leakage current; Any input 0V<VIN<VCC; Other pins
not under test = 0V
Command/Address,
-20
20
μA
RAS#, CAS#, WE#,
CS#, CKE
-20
20
μA
CK, CK#
DM
-5
5
μA
IOZ
Output leakage current;
0V<VOUT<VCC; DQs and ODT are disabled
DQ, DQS, DQS#
-5
5
μA
IVREF
VREF leakage current; VREF = Valid VREF level
-8
8
μA
TABLE 7 – INPUT/OUTPUT CAPACITANCE
TA = 25°C, f = 1MHz, VCC = 1.8V
Parameter
Symbol
Max
Unit
Input capacitance (A0 - A13, BA0 - BA2 ,CS#, RAS#,CAS#,WE#, CKE, ODT)
CIN1
TBD
pF
Input capacitance CK, CK#
CIN2
TBD
pF
Input capacitance DM, DQS, DQS#
CIN3
TBD
pF
Input capacitance DQ0 - 15
COUT
TBD
pF
相关PDF资料 |
PDF描述 |
|---|---|
| W3H64M64E-400SBC | 64M X 64 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-533ES | 64M X 72 DDR DRAM, 0.5 ns, PBGA208 |
| W3H64M72E-ESM | 64M X 72 DDR DRAM, PBGA208 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3H64M16E-400BI | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ - Bulk |
| W3H64M64E-400SBC | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H64M64E-400SBI | 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H64M64E-400SBM | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H64M64E-533SBC | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
发布紧急采购，3分钟左右您将得到回复。