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参数资料
| 型号： | W3H64M16E-400BC |
| 厂商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分类： | DRAM |
| 英文描述： | 64M X 16 DDR DRAM, 0.6 ns, PBGA79 |
| 封装： | 14 X 11 MM, 1.27 MM PITCH, PLASTIC, BGA-79 |
| 文件页数： | 5/30页 |
| 文件大小： | 881K |
| 代理商： | W3H64M16E-400BC |
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W3H64M16E-XBX
13
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
July 2009
Rev. 5
White Electronic Designs Corp. reserves the right to change products or specications without notice.
POSTED CAS ADDITIVE LATENCY (AL)
Posted CAS additive latency (AL) is supported to make
the command and data bus efficient for sustainable
bandwidths in DDR2 SDRAM. Bits E3–E5 dene the value
of AL, as shown in Figure 7. Bits E3–E5 allow the user
to program the DDR2 SDRAM with an inverse AL of 0, 1,
2, 3, or 4 clocks. Reserved states should not be used as
unknown operation or incompatibility with future versions
may result.
In this operation, the DDR2 SDRAM allows a READ or
WRITE command to be issued prior to tRCD (MIN) with
the requirement that AL ≤ tRCD (MIN). A typical application
using this feature would set AL = tRCD (MIN) - 1x tCK. The
READ or WRITE command is held for the time of the AL
before it is issued internally to the DDR2 SDRAM device.
RL is controlled by the sum of AL and CL; RL = AL+CL.
Write latency (WL) is equal to RL minus one clock; WL =
AL + CL - 1 x tCK.
A9
A7 A 6 A5 A4 A3
A8
A2
A1 A0
Extended Mo de
Register (Ex)
Address Bus
97
6
5
4
3
8
2
1
0
A10
A12 A11
BA0
BA1
BA2
10
11
12
13
01
14
1
16
5
A13
0
1
0
1
Mode Register Definition
Mo de Register (MR)
Extended Mo de Register (EMR)
Extended Mo de Register (EMR2)
Extended Mo de Register (EMR3)
M 15
0
1
M 14
EMR2
01
01 01
01
High Temperature Self Refresh rate enable
Commer cial-Temperature default
Industrial-Temperature option;
use if T
C exceeds 85°C
E7
0
1
FIGURE 8 – EXTENDED MODE REGISTER 2 (EMR2) DEFINITION
Note: 1. Reserved for future use, must be set to "0".
相关PDF资料 |
PDF描述 |
|---|---|
| W3H64M64E-400SBC | 64M X 64 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-400ESI | 64M X 72 DDR DRAM, 0.6 ns, PBGA208 |
| W3H64M72E-533ES | 64M X 72 DDR DRAM, 0.5 ns, PBGA208 |
| W3H64M72E-ESM | 64M X 72 DDR DRAM, PBGA208 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W3H64M16E-400BI | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ - Bulk |
| W3H64M64E-400SBC | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
| W3H64M64E-400SBI | 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H64M64E-400SBM | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 400MHZ, 208PBGA MIL-TEMP. - Bulk 制造商:Microsemi Corporation 功能描述:SDRAM MEMORY |
| W3H64M64E-533SBC | 制造商:Microsemi Corporation 功能描述:64M X 64 DDR2, 1.8V, 533MHZ, 208PBGA COMMERICAL TEMP. - Bulk |
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