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参数资料
| 型号： | W942516CH-75 |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 16M X 16 DDR DRAM, 0.75 ns, PDSO66 |
| 封装： | 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 |
| 文件页数： | 15/47页 |
| 文件大小： | 2809K |
| 代理商： | W942516CH-75 |
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W942516CH
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The write command performs a Write operation to the bank designated by BS. The write data are
latched at both edges of DQS. The length of the write data (Burst Length) and column access
sequence (Addressing Mode) must be in the Mode Register at power-up prior to the Write
operation.
5. Write with Auto Precharge Command
( RAS = "H", CAS = "L", WE = "L", BS0, BS1 = Bank, A10 = "H", A0 to A9, A11 = Column
Address)
The Write with Auto Precharge command performs the Precharge operation automatically after the
Write operation. This command must not be interrupted by any other commands.
6. Read Command
( RAS = "H", CAS = "L", WE = "H", BS0, BS1 = Bank, A10 = "L", A0 to A9, A11 = Column
Address)
The Read command performs a Read operation to the bank designated by BS. The read data are
synchronized with both edges of DQS. The length of read data (Burst Length), Addressing Mode
and CAS Latency (access time from CAS command in a clock cycle) must be programmed in
the Mode Register at power-up prior to the Read operation.
7. Read with Auto Precharge Command
( RAS = "H", CAS = ”L”, WE = ”H”, BS0, BS1 = Bank, A10 = ”H”, A0 to A9, A11 = Column
Address)
The Read with Auto precharge command automatically performs the Precharge operation after the
Read operation.
1) READA
≥ tRAS (min) - (BL/2) x tCK
Internal precharge operation begins after BL/2 cycle from Read with Auto Precharge command.
2) tRCD(min)
READA < tRAS(min) - (BL/2) x tCK
≤
Data can be read with shortest latency, but the internal Precharge operation does not begin until
after tRAS (min) has completed.
This command must not be interrupted by any other command.
8. Mode Register Set Command
( RAS = "L", CAS = "L", WE = "L", BS0 = "L", BS1 = "L", A0 to A12 = Register Data)
The Mode Register Set command programs the values of CAS latency, Addressing Mode, Burst
Length and DLL reset in the Mode Register. The default values in the Mode Register after power-
up are undefined, therefore this command must be issued during the power-up sequence. Also,
this command can be issued while all banks are in the idle state. Refer to the table for specific
codes.
9. Extended Mode Register Set Command
( RAS = "L", CAS = "L", WE = "L", BS0 = "H", BS1 = "L", A0 to A12 = Register data)
相关PDF资料 |
PDF描述 |
|---|---|
| W9425G6DH-6F | 16M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| W9425G6DH-6I | 16M X 16 DDR DRAM, 0.7 ns, PDSO66 |
| W9425G8EH-5 | 32M X 8 DDR DRAM, 0.7 ns, PDSO66 |
| W9451GBDA-6 | 64M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 |
| W9451GBDA-75 | 64M X 64 DDR DRAM MODULE, 0.75 ns, DMA184 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W9425G6DH | 制造商:WINBOND 制造商全称:Winbond 功能描述:4M X 4 BANKS X 16 BITS DDR SDRAM |
| W9425G6EH | 制造商:WINBOND 制造商全称:Winbond 功能描述:4 M 】 4 BANKS 】 16 BITS DDR SDRAM |
| W9425G6EH_0812 | 制造商:WINBOND 制造商全称:Winbond 功能描述:4 M × 4 BANKS × 16 BITS DDR SDRAM |
| W9425G6EH-5 | 功能描述:IC DDR-400 SDRAM 256MB 66TSSOPII RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
| W9425G6EH-5I | 制造商:Winbond Electronics Corp 功能描述: |
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