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参数资料
| 型号： | W9812G21H-6I |
| 厂商： | WINBOND ELECTRONICS CORP |
| 元件分类： | DRAM |
| 英文描述： | 4M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86 |
| 封装： | 0.400 INCH, ROHS COMPLIANT, TSOP2-86 |
| 文件页数： | 23/36页 |
| 文件大小： | 1422K |
| 代理商： | W9812G21H-6I |
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W9812G2IH
Publication Release Date:Nov. 06, 2008
- 3 -
Revision A01
1
GENERAL DESCRIPTION
W9812G2IH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
1,048,576 words
× 4 banks × 32 bits. W9812G2IH delivers a data bandwidth of up to 166M words per
second (-6). For different application, W9812G2IH is sorted into following speed grades: -6C, -6, -6I
and -75. The -6C/-6/-6I is compliant to the 166MHz/CL3 specification. (The speed grade of -6C
supports tRP=16nS, tRCD=16nS, tRC=48nS, tAC=4.5nS, tIH=0.8nS and the -6I speed grade which is
guaranteed to support -40°C ~ 85°C.) The -75 is compliant to the 133MHz/CL3 specification.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9812G2IH is ideal for main memory in
high performance applications.
2
FEATURES
3.3V ± 0.3V Power Supply
Up to 166 MHz Clock Frequency
1,048,576 Words
× 4 banks × 32 bits organization
Self Refresh Mode
CAS Latency: 2 and 3
Burst Length: 1, 2, 4, 8 and full page
Burst Read, Single Writes Mode
Byte Data Controlled by DQM0-3
Auto-precharge and Controlled Precharge
4K Refresh cycles/64 mS
Interface: LVTTL
Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant
3
AVAILABLE PART NUMBER
PART NUMBER
SPEED
MAXIMUM SELF
REFRESH CURRENT
OPERATING
TEMPERATURE
W9812G2IH-6C
166MHz/CL3
2mA
0°C ~ 70°C
W9812G2IH-6
166MHz/CL3
2mA
0°C ~ 70°C
W9812G2IH-6I
166MHz/CL3
2mA
-40°C ~ 85°C
W9812G2IH-75
133MHz/CL3
2mA
0°C ~ 70°C
相关PDF资料 |
PDF描述 |
|---|---|
| W9812G21H-6C | 4M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86 |
| W9812G6JH-6 | 8M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 |
| W986416AH-10 | 4M X 16 SYNCHRONOUS DRAM, 8 ns, PDSO54 |
| W986432DH-6 | 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86 |
| W986432DH-8 | 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| W9812G2GB | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M 】 4 BANKS 】 32BITS SDRAM |
| W9812G2GB-6 | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M 】 4 BANKS 】 32BITS SDRAM |
| W9812G2GB-6I | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M 】 4 BANKS 】 32BITS SDRAM |
| W9812G2GB-75 | 制造商:WINBOND 制造商全称:Winbond 功能描述:1M 】 4 BANKS 】 32BITS SDRAM |
| W9812G2GH | 制造商:WINBOND 制造商全称:Winbond 功能描述:a high-speed synchronous dynamic random access memory (SDRAM), organized as 1,048,576 words 】 4 banks 】 32 bits |
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