参数资料
型号: WED2DL36513V40BI
元件分类: SRAM
英文描述: 512K X 36 MULTI DEVICE SRAM MODULE, 4 ns, PBGA119
封装: PLASTIC, BGA-119
文件页数: 9/12页
文件大小: 266K
代理商: WED2DL36513V40BI
6
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
WED2DL36513V
WED2DL36513AV
AC CHARACTERISTICS (WED2DL36513AV)
Symbol
200MHz
166MHz
150MHz
133MHz
Parameter
Min
Max
Min
Max
Min
Max
Min
Max
Units
Clock
Clock Cycle Time
tKC
5.0
6.0
6.6
7.5
ns
Clock Frequency
tKF
200
166
150
133
MHz
Clock HIGH Time
tKH
2.0
2.4
2.6
ns
Clock LOW Time
tKL
2.0
2.4
2.6
ns
Output Times
Clock to output valid
tKQ
2.5
3.5
3.8
4.0
ns
Clock to output invalid (2)
tKQX
1.25
1.5
ns
Clock to output on Low-Z (2,3,4)
tKQLZ
00
0
ns
Clock to output in High-Z (2,3,4)
tKQHZ
3.0
3.5
3.8
4.0
ns
OE to output valid (5)
tOEQ
2.5
3.5
3.8
4.0
ns
OE to output in Low-Z (2,3,4)
tOELZ
00
0
ns
OE to output in High Z (2,3,4)
tOEHZ
2.5
3.5
3.8
4.0
ns
Setup Times
Address (6,7)
tAS
1.0
ns
Address status (ADSC, ADSP) (6,7)
tADSS
1.0
ns
Address advance (ADV) (6,7)
tAAS
1.0
ns
Write signals (BWa-BWd, BWE, GW) (6,7)
tWS
1.0
ns
Data-in (6,7)
tDS
1.0
ns
Chip enables (CE, CE2, CE2) (6,7)
tCES
1.0
ns
Hold Times
Address (6,7)
tAH
1.0
ns
Address status (ADSC, ADSP) (6,7)
tADSH
1.0
ns
Address advance (ADV) (6,7)
tAAH
1.0
ns
Write Signals (BWa-BWd, BWE, GW) (6,7)
tWH
1.0
ns
Data-in (6,7)
tDH
1.0
ns
Chip Enables (CE, CE2, CE2) (6,7)
tCEH
1.0
ns
NOTES:
1. Test conditions as specified with the output loading as shown in Figure 1 for 3.3V 1/0 and Figure 3 for 2.5V 1/0 unless otherwise noted.
2. This parameter is measured with output load as shown in Figure 2 for 3.3V 1/0 and Figure 4 for 2.5V 1/0.
3. This parameter is sampled.
4. Transition is measured
±500mV from steady state voltage.
5. OE is a “Don’t Care” when a byte write enable is sampled LOW.
6. A WRITE cycle is defined by at least one byte write enable LOW and ADSP HIGH for the required setup and hold times. A READ cycle Is defined by all
byte write enables HIGH and ADSC or ADV LOW or ADSP LOW for the required setup and hold times.
7. This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK when either ADSP or ADSC is LOW
and chip enabled. All other synchronous inputs must meet the setup and hold times with stable logic levels for all rising edges of clock (CLK) when the
chip is enabled. Chip enable must be valid at each rising edge of CLK when either ADSP or ADSC is LOW to remain enabled.
相关PDF资料
PDF描述
WSF512K16X-72H2IA SPECIALTY MEMORY CIRCUIT, CHMA66
WF128K32-120G2Q5 128K X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68
WF128K32-120G2UQ5 128K X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68
WF128K32-150G2UQ5 128K X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68
WS256K32L-35HMA 256K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CHIP66
相关代理商/技术参数
参数描述
WED2DL36513V-B 制造商:未知厂家 制造商全称:未知厂家 功能描述:SSRAM MCP
WED2EG472512V5D2 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:16MB (4x512Kx72) SYNC BURST PIPELINE, DUAL KEY DIMM
WED2EG472512V65D2 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:16MB (4x512Kx72) SYNC BURST PIPELINE, DUAL KEY DIMM
WED2EG472512V6D2 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:16MB (4x512Kx72) SYNC BURST PIPELINE, DUAL KEY DIMM
WED2EG472512V7D2 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:16MB (4x512Kx72) SYNC BURST PIPELINE, DUAL KEY DIMM