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参数资料
| 型号： | WEDPF2M64B-120BC3 |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | PROM |
| 英文描述： | 2M X 64 FLASH 3.3V PROM MODULE, 120 ns, PBGA119 |
| 封装： | STACKED TSOP, BGA-119 |
| 文件页数： | 7/13页 |
| 文件大小： | 317K |
| 代理商： | WEDPF2M64B-120BC3 |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WEDPF2M64-XBX3
ABSOLUTE MAXIMUM RATINGS
NOTES:
1. Stresses above the absolute maximum rating may cause
permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
Parameter
Unit
Operating Temperature
-55 to +125
°C
Supply Voltage Range (VCC)
-0.5 to +4.0
V
Signal Voltage Range
-0.5 to Vcc +0.5
V
Storage Temperature Range
-65 to +150
°C
Endurance (write/erase cycles)
1,000,000 min.
cycles
RECOMMENDEDOPERATINGCONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
3.0
3.6
V
Input High Voltage
VIH
0.7 x Vcc VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
Operating Temp. (Ind.)
TA
-40
+85
°C
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Input Leakage Current
I LI
VCC = 3.6, VIN = GND or VCC
10
A
Output Leakage Current
ILOx32
VCC = 3.6, VIN = GND or VCC
10
A
VCC Active Current for Read (1)
ICC1
CS = VIL, OE = VIH, f = 5MHz
65
mA
VCC Active Current for Program or Erase (2)
ICC2
CS = VIL, OE = VIH
120
mA
VCC Standby Current
ICC3
VCC = 3.6, CS = VIH, f = 5MHz
20
mA
VCC Reset Current (2)
ICC4
RESET = VSS ± 0.3V
1
20
mA
Automatic Sleep Mode (2,4)
ICC5
VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V
1
20
mA
VCC Active Read-While-Program
ICC6
Current (1,2)
CE = VIL, OE = VIH
Word
85
180
mA
VCC Active Program-While-Erase
ICC7
Current (1,2)
CE = VIL, OE = VIH
Word
85
180
mA
VCC Active Program-While-Erase-Suspended
ICC8
Current (2,5)
CE = VIL, OE = VIH
70
140
mA
ACC Accelerated Program Current
I ACC
ACC Pin
20
40
CE = VIL, OE = VIH
VCC Pin
60
120
mA
Output Low Voltage
VOL
IOL = 5.8 mA, VCC = 3.0
0.45
V
Output High Voltage
VOH1
IOH = -2.0 mA, VCC = 3.0
0.85 X VCC
V
Low VCC Lock-Out Voltage (4)
VLKO
2.3
2.5
V
DC CHARACTERISTICS - CMOS COMPATIBLE
(VCC = 3.3V, VSS = 0V, TA = -55°C to +125°C)
NOTES:
1.The ICC current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The frequency
component typically is less than 8 mA/MHz, with OE at VIH.
2.ICC active while Embedded Algorithm (program or erase) is in progress.
3.DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
4.Guaranteed by design, but not tested.
DATA RETENTION
Parameter
Test Conditions
Min
Unit
Minimum Pattern Data
150°C
10
Years
Retention Time
125°C
20
Years
Parameter
Symbol
Conditions
Max Unit
WE1-4 capacitance
CWE
VIN = 0 V, f = 1.0 MHz
8pF
CS1-4 capacitance
CCS
VIN = 0 V, f = 1.0 MHz
10
pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
12
pF
Address input capacitance CAD
VIN = 0 V, f = 1.0 MHz
25
pF
RESET capacitance
CRS
VIN = 0 V, f = 1.0 MHz
20
pF
RY/BY capacitance
CRB
VIN = 0 V, f = 1.0 MHz
20
pF
WP/AC capacitance
CWA
VIN = 0 V, f = 1.0 MHz
30
pF
This parameter is guaranteed by design but not tested.
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