- 您现在的位置：买卖IC网 > PDF目录140426 > WEDPF2M64B-120BC3 (WHITE ELECTRONIC DESIGNS CORP) 2M X 64 FLASH 3.3V PROM MODULE, 120 ns, PBGA119 PDF资料下载
参数资料
| 型号： | WEDPF2M64B-120BC3 |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | PROM |
| 英文描述： | 2M X 64 FLASH 3.3V PROM MODULE, 120 ns, PBGA119 |
| 封装： | STACKED TSOP, BGA-119 |
| 文件页数： | 9/13页 |
| 文件大小： | 317K |
| 代理商： | WEDPF2M64B-120BC3 |
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WEDPF2M64-XBX3
Parameter
Symbol
-70
-100
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Write Cycle Time
tAVAV
tWC
70
100
120
150
n s
Chip Select Setup Time
tELWL
tCS
0
n s
Write Enable Pulse Width
tWLWH
tWP35
50
65
n s
Address Setup Time
tAVWL
tAS
0
n s
Data Setup Time
tDVWH
tDS
45
50
65
n s
Data Hold Time
tWHDX
tDH
0
n s
Address Hold Time
tWLAX
tAH
45
50
65
n s
Write Enable Pulse Width High
tWHWL
tWPH
30
35
n s
Duration of Byte Programming Operation (1)
tWHWH1
300
s
Sector Erase
tWHWH2
15
s e c
Read Recovery Time before Write (3)
tGHWL
0
000
s
VCC Setup Time
tVCS
5 0
s
Chip Programming Time
50
s e c
Output Enable Setup Time
tOES
0
n s
Output Enable Hold Time (2)
tOEH
10
n s
Address Setup Time to OE low during toggle bit polling
tASO
1 5
n s
Address Hold Time From CS or OE high
0
during toggle
tAHT
0
n s
Output Enable High during toggle bit polling
tOEPH
2 0
n s
Latency Between Read and Write Operations
tsr/W
0
n s
Write Recovery Time from RY/BY
tRB
0
n s
Program/Erase Valis to RY/BY
tBUSY
9 0
n s
AC CHARACTERISTICS WRITE/ERASE/PROGRAM OPERATIONS - WE CONTROLLED
(VCC = 3.3V, TA = -55°C to +125°C)
1.Typical value for tWHWH1 is 9s.
2.For Toggle and Data Polling.
3.Guaranteed by design, but not tested.
AC CHARACTERISTICS READ-ONLY OPERATIONS
(VCC = 3.3V, TA = -55°C to +125°C)
1. Guaranteed by design, not tested.
Parameter
Symbol
-70
-100
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
t AVAV
tRC
7 0
100
120
150
n s
Address Access Time
tAVQV
tACC
70
100
120
150
n s
Chip Select Access Time
tELQV
tCE
70
100
120
150
n s
Output Enable to Output Valid
tGLQV
tOE
4 0
5 0
5 5
n s
Chip Select High to Output High Z (1)
tEHQZ
tDF
30
40
n s
Output Enable High to Output High Z (1)
tGHQZ
tDF
30
40
n s
Output Hold from Addresses, CS or OE Change,
t AXQX
tOH
0
n s
Whichever is first
Read
tOEH
0
Output Enable Hold Time (1)
Toggle and
Data Polling
10
相关PDF资料 |
PDF描述 |
|---|---|
| W25Q16CVSFAG | 16M X 1 SPI BUS SERIAL EEPROM, PDSO16 |
| W25Q16CVZPAG | 16M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| WF128K32-150G2LC5 | 128K X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68 |
| WS128K32L-55G2UCA | 128K X 32 MULTI DEVICE SRAM MODULE, 55 ns, CQFP68 |
| WE128K32N-200HSQ | 512K X 8 EEPROM 5V MODULE, 200 ns, CHIP66 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| WEDPN16M64V-100B2C | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:16Mx64 Synchronous DRAM |
| WEDPN16M64V-100B2I | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:16Mx64 Synchronous DRAM |
| WEDPN16M64V-100B2M | 制造商:WEDC 制造商全称:White Electronic Designs Corporation 功能描述:16Mx64 Synchronous DRAM |
| WEDPN16M64V-100BC | 制造商:Microsemi Corporation 功能描述:16M X 64 SDRAM MODULE, 3.3V, 100 MHZ, 219 PBGA 25MM X 25MM, - Bulk |
| WEDPN16M64V-100BI | 制造商:Microsemi Corporation 功能描述:16M X 64 SDRAM MODULE, 3.3V, 100 MHZ, 219 PBGA 25MM X 25MM, - Bulk |
发布紧急采购，3分钟左右您将得到回复。