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参数资料
| 型号： | WS128K32-35G2TCEA |
| 元件分类： | SRAM |
| 英文描述： | 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68 |
| 封装： | 22.40 MM, CERAMIC, QFP-68 |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 代理商： | WS128K32-35G2TCEA |
2
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS128K32-XG2TXE
Characteristic
Sym
Conditions
Min
Max
Units
Data Retention Voltage
VCC
VCC = 2.0V
2
-
V
Data Retention Quiescent Current
ICCDR
CS
≥ VCC -0.2V
-
1
mA
Chip Disable to Data Retention Time (1)
TCDR
VIN
≥ VCC -0.2V
0
-
ns
Operation Recovery Time (1)
TR
or VIN
≤ 0.2V
TRC
-ns
NOTE: Parameter guaranteed, but not tested.
CAPACITANCE
(TA = +25
°C)
Parameter
Symbol
Conditions
Max
Unit
OE capacitance
COE
VIN = 0 V, f = 1.0 MHz
50
pF
WE1-4 capacitance
CWE
VIN = 0 V, f = 1.0 MHz
pF
CQFP G2T
20
CS1-4 capacitance
CCS
VIN = 0 V, f = 1.0 MHz
20
pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz
20
pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz
50
pF
This parameter is guaranteed by design but not tested.
TRUTH TABLE
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
Vcc+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
Out Disable
High Z
Active
DATA RETENTION CHARACTERISTICS
(TA = -55
°C to +125°C)
RADIATION CHARACTERISTICS
Total Dose (TM1019.5)
Latch-up
SEU LET
Cross
Functional
Parametric
25
°C
Threshold
Section
VCC Max
(VCC MIN)
/BIT
(Krads)
Typical Iccsb (mA) (MeV/mg/cm2)
(MeV/mg/cm2)
(E-6 cm2)
30
1.2
>100
2
0.2
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.3
+0.8
V
Operating Temp. (Mil.)
TA
-55
+125
°C
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55
°C to +125°C)
Parameter
Sym
Conditions
Units
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10
A
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10
A
Operating Supply Current
ICC
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
520
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
8
mA
Output Low Voltage
VOL
IOL = 8mA, VCC = 4.5
0.4
V
Output High Voltage
VOH
IOH = -4OmA, VCC = 4.5
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WS128K32-35G2TI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 SRAM Module |
| WS128K32-35G2TM | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 SRAM Module |
| WS128K32-35G2TQ | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x32 SRAM Module |
| WS128K32-35G2UC | 制造商:Microsemi Corporation 功能描述:128K X 32 SRAM MODULE, 5V, 35NS, 68 CQFP 0.88" SQ., 0.140" H - Bulk |
| WS128K32-35G2UI | 制造商:Microsemi Corporation 功能描述:128K X 32 SRAM MODULE, 5V, 35NS, 68 CQFP 0.88" SQ., 0.140" H - Bulk |
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