参数资料
型号: WS128K32-35G2TCEA
元件分类: SRAM
英文描述: 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68
封装: 22.40 MM, CERAMIC, QFP-68
文件页数: 3/6页
文件大小: 0K
代理商: WS128K32-35G2TCEA
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS128K32-XG2TXE
FIG. 2
AC TEST CIRCUIT
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75
.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
I
Current Source
D.U.T.
C
= 50 pf
eff
I
OL
V
1.5V
(Bipolar Supply)
Z
Current Source
OH
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
AC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55
°C to +125°C)
AC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55
°C to +125°C)
Parameter
Symbol
-35
-45
-55
Units
Write Cycle
Min
Max
Min
Max
Min
Max
Write Cycle Time
tWC
35
45
55
ns
Chip Select to End of Write
tCW
25
35
45
ns
Address Valid to End of Write
tAW
25
35
45
ns
Data Valid to End of Write
tDW
20
25
ns
Write Pulse Width
tWP
25
35
45
ns
Address Setup Time
tAS
00
0
ns
Address Hold Time
tAH
00
0
ns
Output Active from End of Write
tOW1
00
0
ns
Write Enable to Output in High Z
tWHZ1
10
15
20
ns
Data Hold Time
tDH
00
0
ns
1. This parameter is guaranteed by design but not tested.
Parameter
Symbol
-35
-45
-55
Units
Read Cycle
Min
Max
Min
Max Min
Max
Read Cycle Time
tRC
35
45
55
ns
Address Access Time
tAA
35
45
55
ns
Output Hold from Address Change
tOH
00
0
ns
Chip Select Access Time
tACS
35
45
55
ns
Output Enable to Output Valid
tOE
15
20
30
ns
Chip Select to Output in Low Z
tCLZ1
33
3
ns
Output Enable to Output in Low Z
tOLZ1
00
0
ns
Chip Disable to Output in High Z
tCHZ1
20
ns
Output Disable to Output in High Z
tOHZ1
12
15
20
ns
1. This parameter is guaranteed by design but not tested.
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