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参数资料
| 型号： | WS512K32N-120HQ |
| 厂商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分类： | SRAM |
| 英文描述： | 512K X 32 MULTI DEVICE SRAM MODULE, 120 ns, CPGA66 |
| 封装： | 1.185 X 1.185 INCH, HERMETIC SEALED, CERAMIC, HIP-66 |
| 文件页数： | 3/8页 |
| 文件大小： | 182K |
| 代理商： | WS512K32N-120HQ |
3
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
WS512K32-XXX
White Electronic Designs
Parameter
Symbol
Min
MaxUnit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND
VG
-0.5
Vcc+0.5
V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
TRUTH TABLE
RECOMMENDED OPERATING CONDITIONS
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
MaxUnit
Supply Voltage
VCC
4.5
5.5
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
-0.5
+0.8
V
Operating Temp (Mil)
TA
-55
+125
°C
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Conditions
MaxUnit
OE capacitance
COE
VIN = 0 V, f = 1.0 MHz 50 pF
WE1-4 capacitance
CWE
VIN = 0 V, f = 1.0 MHz
pF
HIP (PGA)
20
CQFP G2T
15
CS1-4 capacitance
CCS
VIN = 0 V, f = 1.0 MHz 20 pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz 20 pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz 50 pF
This parameter is guaranteed by design but not tested.
Parameter
Symbol
Conditions
Units
Min
Max
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
10A
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
10A
Operating Supply Current x 32 Mode
ICC x 32
CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
200
mA
Standby Current
ISB
CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
4.0
mA
Output Low Voltage
VOL
IOL = 2.1mA, Vcc = 4.5
0.4
V
Output High Voltage
VOH
IOH = -1.0mA, Vcc = 4.5
2.4
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C TO +125°C)
DATA RETENTION CHARACTERISTICS
(TA = -55°C TO +125°C)
Parameter
Symbol
Conditions
Units
Min
Typ
Max
Data Retention Supply Voltage
VDR
CS VCC -0.2V
2.0
5.5
V
Data Retention Current
ICCDR1
VCC = 3V
0.4
1.6
mA
CS
OE
WE
Mode
Data I/O
Power
H
X
Standby
High Z
Standby
L
H
Read
Data Out
Active
L
H
Out Disable
High Z
Active
L
X
L
Write
Data In
Active
LOW CAPACITANCE CQFP
(TA = +25°C)
Parameter
Symbol
Conditions
MaxUnit
OE capacitance
COE
VIN = 0 V, f = 1.0 MHz 32 pF
CQFP G4 capacitance
CWE
VIN = 0 V, f = 1.0 MHz 32 pF
CS1-4 capacitance
CCS
VIN = 0 V, f = 1.0 MHz 15 pF
Data I/O capacitance
CI/O
VI/O = 0 V, f = 1.0 MHz 15 pF
Address input capacitance
CAD
VIN = 0 V, f = 1.0 MHz 32 pF
This parameter is guaranteed by design but not tested.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| WS512K32N-17H1C | 制造商:Microsemi Corporation 功能描述:512K X 32 SRAM MODULE, 5V, 17NS, NO CONNECT, 66 PGA 1.075" S - Bulk |
| WS512K32N-17H1CA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM|512KX32|CMOS|PGA|66PIN|CERAMIC |
| WS512K32N-17H1I | 制造商:Microsemi Corporation 功能描述:512K X 32 SRAM MODULE, 5V, 17NS, NO CONNECT, 66 PGA 1.075" S - Bulk |
| WS512K32N-17H1IA | 制造商:未知厂家 制造商全称:未知厂家 功能描述:SRAM|512KX32|CMOS|PGA|66PIN|CERAMIC |
| WS512K32N-17H1M | 制造商:Microsemi Corporation 功能描述:512K X 32 SRAM MODULE, 5V, 17NS, NO CONNECT, 66 PGA 1.075" S - Bulk |
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