参数资料
型号: WS512K32N-120HQ
厂商: WHITE ELECTRONIC DESIGNS CORP
元件分类: SRAM
英文描述: 512K X 32 MULTI DEVICE SRAM MODULE, 120 ns, CPGA66
封装: 1.185 X 1.185 INCH, HERMETIC SEALED, CERAMIC, HIP-66
文件页数: 4/8页
文件大小: 182K
代理商: WS512K32N-120HQ
4
White Electronic Designs Corporation Phoenix AZ (602) 437-1520
WS512K32-XXX
White Electronic Designs
AC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C TO +125°C)
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 W.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
AC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C TO +125°C)
AC TEST CONDITIONS
Parameter
Typ
Unit
Input Pulse Levels
VIL = 0, VIH = 3.0
V
Input Rise and Fall
5
ns
Input and Output Reference Level
1.5
V
Output Timing Reference Level
1.5
V
Parameter
Symbol
-15*
-17
-20
-25
Units
Write Cycle
Min MaxMin MaxMin
MaxMin Max
Write Cycle Time
tWC
70
85
100
120
ns
Chip Select to End of Write
tCW
60
75
80
100
ns
Address Valid to End of Write
tAW
60
75
80
100
ns
Data Valid to End of Write
tDW
30
40
ns
Write Pulse Width
tWP
50
60
ns
Address Setup Time
tAS
00
0
ns
Address Hold Time
tAH
55
5
ns
Output Active from End of Write
tOW1
55
5
ns
Write Enable to Output in High Z
tWHZ1
25
35
ns
Data Hold from Write Time
tDH
00
0
ns
1. This parameter is guaranteed by design but not tested.
Parameter
Symbol
-70
-85
-100
-120
Units
Read Cycle
Min MaxMin MaxMin MaxMin Max
Read Cycle Time
tRC
70
85
100
120
ns
Address Access Time
tAA
70
85
100
120
ns
Output Hold from Address Change
tOH
55
5
ns
Chip Select Access Time
tACS
70
85
100
120
ns
Output Enable to Output Valid
tOE
35
40
50
60
ns
Chip Select to Output in Low Z
tCLZ1
10
101010
ns
Output Enable to Output in Low Z
tOLZ1
55
5
ns
Chip Disable to Output in High Z
tCHZ1
25
35
ns
Output Disable to Output in High Z
tOHZ1
25
35
ns
1. This parameter is guaranteed by design but not tested.
FIG. 3
AC TEST CIRCUIT
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